| Presentation | 2008-01-30 InP Ballistic Transistors Yasuyuki MIYAMOTO, Kazuhito FURUYA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To minimize scattering of electron in electron devices, we proposed InP ballistics transistors. By Monte Carlo simulation, average speed of carrier is over 8×10^7cm/s. This speed is two times higher than the speed of reported conventional devices. When 2MA/cm^2 is assumed as current density, estimated cutoff frequency was over 1.4THz. Fabricated transistor with Schottky gate with 25nm-wide emitter by electron beam lithography showed voltage gain and current gain simultaneously, similar to conventional transistor structure. To reduce gate leakage current, transistors with insulated gates were also fabricated and current modulation by insulated gate was confirmed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP/InGaAs / ballistic electron / hot electron transistors / Monte Carlo simulation / insulated gate / electron beam lithography |
| Paper # | ED2007-241,SDM2007-252 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2008/1/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | InP Ballistic Transistors |
| Sub Title (in English) | |
| Keyword(1) | InP/InGaAs |
| Keyword(2) | ballistic electron |
| Keyword(3) | hot electron transistors |
| Keyword(4) | Monte Carlo simulation |
| Keyword(5) | insulated gate |
| Keyword(6) | electron beam lithography |
| 1st Author's Name | Yasuyuki MIYAMOTO |
| 1st Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology:CREST, Japan Science and Technology Corporation() |
| 2nd Author's Name | Kazuhito FURUYA |
| 2nd Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology:CREST, Japan Science and Technology Corporation |
| Date | 2008-01-30 |
| Paper # | ED2007-241,SDM2007-252 |
| Volume (vol) | vol.107 |
| Number (no) | 474 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |