Presentation	2008-01-30 Electrical characterizations of InGaAs related nanowires grown by selective-area MOVPE Jinichiro NOBORISAKA, Takuya SATO, Junichi MOTOHISA, Shinjiro HARA, Takashi FUKUI,
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Abstract(in English)	Semiconductor nanowires are attracting much attention as a new class of nanoscale materials. Particularly, vertical surrounding gate FETs, which is a one of the useful applications utilizing semiconductor nanowires, have been expected to show superior transconductance, high current on-off (I_) ratio and reduced short channel effects compared with conventional planar type FETs. In experiment, Silicon-doped n-InGaAs nanowires were grown by catalyst-free selective-area metal-organic vapor-phase epitaxy (SA-MOVPE). The nanowire FETs with MIS back-gate and 80% coverage MES top-gate on SiO_2-coated Si substrates were fabricated and characterized by defining metal contacts at both ends of the nanowires and the Al top-gate between contacts.
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Keyword(in English)	nanowire / nano-FET / MOVPE / InGaAs / selective are growth
Paper #	ED2007-238,SDM2007-249
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Committee	SDM
Conference Date	2008/1/23(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
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Title (in English)	Electrical characterizations of InGaAs related nanowires grown by selective-area MOVPE
Sub Title (in English)
Keyword(1)	nanowire
Keyword(2)	nano-FET
Keyword(3)	MOVPE
Keyword(4)	InGaAs
Keyword(5)	selective are growth
1st Author's Name	Jinichiro NOBORISAKA
1st Author's Affiliation	Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University()
2nd Author's Name	Takuya SATO
2nd Author's Affiliation	Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University
3rd Author's Name	Junichi MOTOHISA
3rd Author's Affiliation	Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University
4th Author's Name	Shinjiro HARA
4th Author's Affiliation	Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University
5th Author's Name	Takashi FUKUI
5th Author's Affiliation	Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University
Date	2008-01-30
Paper #	ED2007-238,SDM2007-249
Volume (vol)	vol.107
Number (no)	474
Page	pp.pp.-
#Pages	6
Date of Issue