Presentation 2008-01-17
A Study on a Current-Mirror-Based GaAs HBT RF Power Detector for Wireless Applications
Kazuya YAMAMOTO, Miyo MIYASHITA, Hitoshi KURUSU, Nobuyuki OGAWA, Teruyuki SHIMURA,
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Abstract(in English) This paper describes circuit design and measurement results of a newly developed GaAs-HBT RF power detector for use in wireless applications. The detector features logarithm-like, frequency-independent characteristics. The detector can be also driven with small input power levels, enabling base-terminal monitor which can utilize directivity of a power stage. Since a unique current-mirror-based topology is successfully employed for realizing these features, the detector is easy to implement on a GaAs-HBT power amplifier. Measurement results of a prototype detector fabricated with a single-stage amplifier on the same die are as follows. The detector can deliver a detection voltage of 0.4-2.5V and its slope of less than 0.17V/dB over a 2-22-dBm output power range at 3.5GHz while drawing a current of less than 1.8mA from a 2.85-V supply. The detector is also capable of suppressing voltage dispersion within 50mV over a 3.1-3.9-GHz wide frequency range operation, and this dispersion is less than one-seventh of that of a conventional collector-terminal-monitor type diode detector.
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Keyword(in English) Wireless LAN / RF detector / heterojunction bipolar transistors (HBTs) / WiMAX / MMIC
Paper # ED2007-219,MW2007-150
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Committee MW
Conference Date 2008/1/9(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Study on a Current-Mirror-Based GaAs HBT RF Power Detector for Wireless Applications
Sub Title (in English)
Keyword(1) Wireless LAN
Keyword(2) RF detector
Keyword(3) heterojunction bipolar transistors (HBTs)
Keyword(4) WiMAX
Keyword(5) MMIC
1st Author's Name Kazuya YAMAMOTO
1st Author's Affiliation High Frequency and Optical Device Works, Mitsubishi Electric Corporation()
2nd Author's Name Miyo MIYASHITA
2nd Author's Affiliation High Frequency and Optical Device Works, Mitsubishi Electric Corporation
3rd Author's Name Hitoshi KURUSU
3rd Author's Affiliation High Frequency and Optical Device Works, Mitsubishi Electric Corporation
4th Author's Name Nobuyuki OGAWA
4th Author's Affiliation High Frequency and Optical Device Works, Mitsubishi Electric Corporation
5th Author's Name Teruyuki SHIMURA
5th Author's Affiliation High Frequency and Optical Device Works, Mitsubishi Electric Corporation
Date 2008-01-17
Paper # ED2007-219,MW2007-150
Volume (vol) vol.107
Number (no) 421
Page pp.pp.-
#Pages 6
Date of Issue