| Presentation | 2008-01-16 Effects of a thermal CVD SiN passivation film on electrical characteristics of AlGaN/GaN HEMTs Toshiharu MARUI, Shinichi HOSHI, Yoshiaki MORINO, Masanori ITOH, Isao TAMAI, Fumihiko TODA, Hideyuki OKITA, Yoshiaki SANO, Shohei SEKI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In AlGaN/GaN HEMTs, we used a thermal CVD SiN surface passivation film for suppressing the current collapse due to AlGaN surface level. We expected that the AlGaN surface state could be improved by the thermal CVD passivation film because of its low hydrogen content and high density. NH_3 surface cleaning of 800℃ before SiN film deposition is also effective for improving AlGaN surface state. In this study we investigated the effect of the passivation film's quality on the electrical characteristics of AlGaN/GaN HEMTs. As a result of our experiment, we found that gate leakage current and current collapse was suppressed by using the thermal CVD SiN passivation film. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / GaN / PE-CVD / thermal CVD / SiN / current collapse |
| Paper # | ED2007-208,MW2007-139 |
| Date of Issue |
| Conference Information | |
| Committee | MW |
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| Conference Date | 2008/1/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of a thermal CVD SiN passivation film on electrical characteristics of AlGaN/GaN HEMTs |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | PE-CVD |
| Keyword(4) | thermal CVD |
| Keyword(5) | SiN |
| Keyword(6) | current collapse |
| 1st Author's Name | Toshiharu MARUI |
| 1st Author's Affiliation | Research & Development Center, Oki Electric Industry Co., Ltd.() |
| 2nd Author's Name | Shinichi HOSHI |
| 2nd Author's Affiliation | Research & Development Center, Oki Electric Industry Co., Ltd. |
| 3rd Author's Name | Yoshiaki MORINO |
| 3rd Author's Affiliation | Research & Development Center, Oki Electric Industry Co., Ltd. |
| 4th Author's Name | Masanori ITOH |
| 4th Author's Affiliation | Research & Development Center, Oki Electric Industry Co., Ltd. |
| 5th Author's Name | Isao TAMAI |
| 5th Author's Affiliation | Research & Development Center, Oki Electric Industry Co., Ltd. |
| 6th Author's Name | Fumihiko TODA |
| 6th Author's Affiliation | Research & Development Center, Oki Electric Industry Co., Ltd. |
| 7th Author's Name | Hideyuki OKITA |
| 7th Author's Affiliation | Research & Development Center, Oki Electric Industry Co., Ltd. |
| 8th Author's Name | Yoshiaki SANO |
| 8th Author's Affiliation | Research & Development Center, Oki Electric Industry Co., Ltd. |
| 9th Author's Name | Shohei SEKI |
| 9th Author's Affiliation | Research & Development Center, Oki Electric Industry Co., Ltd. |
| Date | 2008-01-16 |
| Paper # | ED2007-208,MW2007-139 |
| Volume (vol) | vol.107 |
| Number (no) | 421 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |