| Presentation | 2008-01-17 Highly Reliable 0.5-μm-emitter InP/InGaAs HBT Norihide KASHIO, Kenji KURISHIMA, Yoshino K. FUKAI, Shoji YAMAHATA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed 0.5-μm-emitter InP/InGaAs HBTs for 100-Gbit/s-class ICs. To boost f_t, the epitaxial layers of the HBT are thinned and the emitter width is scaled down to 0.5μm. To obtain high reliability, at a high collector current density, we used passivation ledge structures and tungsten-based emitter metal. The fabricated HBT exhibits a current gain of 58, an f_t of 321GHz, and an f_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InP HBT / ledge structure / reliability |
| Paper # | ED2007-218,MW2007-149 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2008/1/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Highly Reliable 0.5-μm-emitter InP/InGaAs HBT |
| Sub Title (in English) | |
| Keyword(1) | InP HBT |
| Keyword(2) | ledge structure |
| Keyword(3) | reliability |
| 1st Author's Name | Norihide KASHIO |
| 1st Author's Affiliation | NTT Photonics Laboratories, NTT Corporation() |
| 2nd Author's Name | Kenji KURISHIMA |
| 2nd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 3rd Author's Name | Yoshino K. FUKAI |
| 3rd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 4th Author's Name | Shoji YAMAHATA |
| 4th Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| Date | 2008-01-17 |
| Paper # | ED2007-218,MW2007-149 |
| Volume (vol) | vol.107 |
| Number (no) | 420 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |