Presentation 2008-01-16
GaN HEMT Doherty Amplifiers for W-CDMA and WiMAX Base Station Applications
Hiroaki SANO, Norihiko UI, Seigo SANO,
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Abstract(in English) Two types of Doherty amplifiers for mobile communication base stations have been developed using GaN HEMTs biased at drain voltage of 50V. At first, a 2.1GHz-band Doherty amplifier demonstrating a saturated output power (Psat) of 57.5dBm (560W) was designed, and then a 2.5GHz-band Doherty amplifier exhibiting a Psat of 54dBm (250W) was developed. Both Doherty amplifiers showed the drain efficiency of more than 50% at 6dB back-off power. The Doherty networks were designed with accurate large signal models and the measured results were in good agreement with the simulated results. We investigated the linearity using digital pre-distortion system, and the drain efficiency of more than 46% was obtained at 8dB back-off power achieving ACLR of less than -54dBc with common W-CDMA 2-carrier signal with peak to average power ratio of 7.8dB. These superior characteristics of GaN HEMT Doherty amplifiers showed good suitability for the base station transmitter system.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Doherty / GaN HEMT / DPD / power amplifier / W-CDMA / WiMAX
Paper # ED2007-209,MW2007-140
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Committee ED
Conference Date 2008/1/9(1days)
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Registration To Electron Devices (ED)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) GaN HEMT Doherty Amplifiers for W-CDMA and WiMAX Base Station Applications
Sub Title (in English)
Keyword(1) Doherty
Keyword(2) GaN HEMT
Keyword(3) DPD
Keyword(4) power amplifier
Keyword(5) W-CDMA
Keyword(6) WiMAX
1st Author's Name Hiroaki SANO
1st Author's Affiliation Eudyna Devices Inc.()
2nd Author's Name Norihiko UI
2nd Author's Affiliation Eudyna Devices Inc.
3rd Author's Name Seigo SANO
3rd Author's Affiliation Eudyna Devices Inc.
Date 2008-01-16
Paper # ED2007-209,MW2007-140
Volume (vol) vol.107
Number (no) 420
Page pp.pp.-
#Pages 6
Date of Issue