Presentation | 2008-01-25 Technical issues of etching process for Nb-junction circuit technology : Reactive ion etching (RIE) of Nb films Masaaki MAEZAWA, Fuminori HIRAYAMA, Sucheta GORWADKAR, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Reactive ion etching (RIE) techniques for Nb films are presented. We report in detail experimental results which were obtained during optimization of our standard Nb/AlO_x/Nb-junction technology for superconductor integrated circuits. Technical issues including dependence of etch depth on RIE time, controllability of pattern shifts and probability of intra-layer short defects are described. We also discuss possible damage to the junctions associated with plasma-induced currents during RIE processes. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Josephson junction / Rapid Single Flux Quantum / RSFQ / Superconductor circuit / RIE / Reactive ion etching |
Paper # | SCE2007-30 |
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Conference Information | |
Committee | SCE |
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Conference Date | 2008/1/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Superconductive Electronics (SCE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Technical issues of etching process for Nb-junction circuit technology : Reactive ion etching (RIE) of Nb films |
Sub Title (in English) | |
Keyword(1) | Josephson junction |
Keyword(2) | Rapid Single Flux Quantum |
Keyword(3) | RSFQ |
Keyword(4) | Superconductor circuit |
Keyword(5) | RIE |
Keyword(6) | Reactive ion etching |
1st Author's Name | Masaaki MAEZAWA |
1st Author's Affiliation | AIST Tsukuba Central() |
2nd Author's Name | Fuminori HIRAYAMA |
2nd Author's Affiliation | AIST Tsukuba Central |
3rd Author's Name | Sucheta GORWADKAR |
3rd Author's Affiliation | AIST Tsukuba Central |
Date | 2008-01-25 |
Paper # | SCE2007-30 |
Volume (vol) | vol.107 |
Number (no) | 458 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |