Presentation 2008-01-25
Technical issues of etching process for Nb-junction circuit technology : Reactive ion etching (RIE) of Nb films
Masaaki MAEZAWA, Fuminori HIRAYAMA, Sucheta GORWADKAR,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Reactive ion etching (RIE) techniques for Nb films are presented. We report in detail experimental results which were obtained during optimization of our standard Nb/AlO_x/Nb-junction technology for superconductor integrated circuits. Technical issues including dependence of etch depth on RIE time, controllability of pattern shifts and probability of intra-layer short defects are described. We also discuss possible damage to the junctions associated with plasma-induced currents during RIE processes.
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Keyword(in English) Josephson junction / Rapid Single Flux Quantum / RSFQ / Superconductor circuit / RIE / Reactive ion etching
Paper # SCE2007-30
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Committee SCE
Conference Date 2008/1/18(1days)
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Registration To Superconductive Electronics (SCE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Technical issues of etching process for Nb-junction circuit technology : Reactive ion etching (RIE) of Nb films
Sub Title (in English)
Keyword(1) Josephson junction
Keyword(2) Rapid Single Flux Quantum
Keyword(3) RSFQ
Keyword(4) Superconductor circuit
Keyword(5) RIE
Keyword(6) Reactive ion etching
1st Author's Name Masaaki MAEZAWA
1st Author's Affiliation AIST Tsukuba Central()
2nd Author's Name Fuminori HIRAYAMA
2nd Author's Affiliation AIST Tsukuba Central
3rd Author's Name Sucheta GORWADKAR
3rd Author's Affiliation AIST Tsukuba Central
Date 2008-01-25
Paper # SCE2007-30
Volume (vol) vol.107
Number (no) 458
Page pp.pp.-
#Pages 5
Date of Issue