Presentation 2007-12-07
Theoretical Analysis of Carrier Injection Rate and Recombination Rate in Tunnel Injection Quantum Well Lasers
Yasutaka Higa, Tomoyuki Miyamoto, Hiroshi Nakajima, Kosuke Fujimoto, Fumio Koyama,
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Abstract(in English) Carrier injection rate in tunnel injection quantum well structure was investigated thorough theoretical analysis. Tunnel injection quantum well structure can be designed to control the carrier injection rate. In this structure, the carrier transition time to active well was a few picoseconds when the structure was designed for high speed transition. In this report, we suggest the guideline for determination the structure of semiconductor lasers for high speed operation.
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Keyword(in English) Tunnel injection / LO phonon scattering / High speed operation
Paper # LQE2007-116
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Committee LQE
Conference Date 2007/11/30(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Theoretical Analysis of Carrier Injection Rate and Recombination Rate in Tunnel Injection Quantum Well Lasers
Sub Title (in English)
Keyword(1) Tunnel injection
Keyword(2) LO phonon scattering
Keyword(3) High speed operation
1st Author's Name Yasutaka Higa
1st Author's Affiliation Microsystem Research Center, Tokyo Institute of Technology()
2nd Author's Name Tomoyuki Miyamoto
2nd Author's Affiliation Microsystem Research Center, Tokyo Institute of Technology
3rd Author's Name Hiroshi Nakajima
3rd Author's Affiliation Microsystem Research Center, Tokyo Institute of Technology
4th Author's Name Kosuke Fujimoto
4th Author's Affiliation Microsystem Research Center, Tokyo Institute of Technology
5th Author's Name Fumio Koyama
5th Author's Affiliation Microsystem Research Center, Tokyo Institute of Technology
Date 2007-12-07
Paper # LQE2007-116
Volume (vol) vol.107
Number (no) 372
Page pp.pp.-
#Pages 6
Date of Issue