| Presentation | 2007-12-14 Effective Activation of Phosphorus atom in Si film using ELA Takashi NOGUCHI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | After UV pulsed excimer laser annealing to highly phosphorus dosed Si film at a dose of 2E15cm2, the conductivity and the correlating crystallinity in the film were analyzed. The crystallinity deduced by S.E. (Spectroscopic Ellipsometry) and by Raman spectroscopy shows good correlation. The conductivity increased with improving the crystallinity. By performing an optimized laser annealing, efficient solidified activation after instantaneous melting occurs, extremely low sheet resistance value down to 100ohm/sq. was obtained for the annealed Si film. Clear tensile stress was observed similar to the case of ELC (Excimer Laser Crystallization) for un-doped Si film. ELA activation subsequently after ion doping is considered effective to the formation of source and drain in high-performance Si TFTs as well as a sensor diode for SoP (System on Panel). |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Poly-Si / TFT / Sheet resistance / Activation / Ion doping |
| Paper # | SDM2007-227 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2007/12/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effective Activation of Phosphorus atom in Si film using ELA |
| Sub Title (in English) | |
| Keyword(1) | Poly-Si |
| Keyword(2) | TFT |
| Keyword(3) | Sheet resistance |
| Keyword(4) | Activation |
| Keyword(5) | Ion doping |
| 1st Author's Name | Takashi NOGUCHI |
| 1st Author's Affiliation | University of the Ryukyus, Faculty of Engineering() |
| Date | 2007-12-14 |
| Paper # | SDM2007-227 |
| Volume (vol) | vol.107 |
| Number (no) | 388 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |