Presentation 2007-12-14
Analysis of Capacitance-Voltage Characteristics of Poly-Si TFTs Using Device Simulation
Tsuyoshi KUZUOKA, Hiroshi TSUJI, Masaharu KIRIHARA, Yoshinari KAMAKURA, Kenji TANIGUCHI,
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Abstract(in English) Capacitance-voltage characteristics of short channel Poly-Si TFTs containing only a single grain boundary were investigated using a two-dimensional device simulator. It was demonstrated that the drain/source charge partition is significantly affected by the position of the grain boundary, which results, in the asymmetric characteristics of the gate-to-source (C_) and the gate-to-drain (C_) capacitances even if no bias is applied between source and drain. We discuss the mechanisms of the asymmetric charge partition caused by the grain boundary by analyzing the internal physical quantities in TFTs (potential, carrier density distribution, etc.) using the device simulations.
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Keyword(in English) polysilicon / TFT / grain boundary / device simulation
Paper # SDM2007-225
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Committee SDM
Conference Date 2007/12/7(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Capacitance-Voltage Characteristics of Poly-Si TFTs Using Device Simulation
Sub Title (in English)
Keyword(1) polysilicon
Keyword(2) TFT
Keyword(3) grain boundary
Keyword(4) device simulation
1st Author's Name Tsuyoshi KUZUOKA
1st Author's Affiliation Graduate School of Engineering, Osaka University()
2nd Author's Name Hiroshi TSUJI
2nd Author's Affiliation Graduate School of Engineering, Osaka University
3rd Author's Name Masaharu KIRIHARA
3rd Author's Affiliation Graduate School of Engineering, Osaka University
4th Author's Name Yoshinari KAMAKURA
4th Author's Affiliation Graduate School of Engineering, Osaka University
5th Author's Name Kenji TANIGUCHI
5th Author's Affiliation Graduate School of Engineering, Osaka University
Date 2007-12-14
Paper # SDM2007-225
Volume (vol) vol.107
Number (no) 388
Page pp.pp.-
#Pages 4
Date of Issue