| Presentation | 2007-12-14 Shallow junction formed by semiconductor laser rapid heating T. Sameshima, N. Sano, M. Naito, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We activated silicon implanted with dopant atoms by infrared semiconductor laser annealing with a 200-nm-thick diamond-like carbon optical absorption layer. When silicon samples implanted with phosphorus ions at 10 and 70keV with a concentration of 2×10^<15>cm^<-2> were annealed by irradiation with a 940nm continuous wave laser at 70kW/cm^2 for 2.6ms, the sheet resistance markedly decreased to 106 and 46Ω/sq, respectively. Moreover, when silicon samples implanted with BF_2 ions at 10keV with a concentration of 1.5×10^<15>cm^<-2> thorough 7.9-nm thermally grown SiO_2 layers were annealed by laser at 80kW/cm^2 for 2.6ms, the sheet resistance decreased to 531Ω/sq. Dopant diffusion caused by laser heating for the both cases was below 5nm. Activation of silicon implanted with impurity atoms was achieved with keeping the initial dopant in-depth profiles. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | activation / diffusion / sheet resistance / SIMS / free carrier |
| Paper # | SDM2007-223 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2007/12/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Shallow junction formed by semiconductor laser rapid heating |
| Sub Title (in English) | |
| Keyword(1) | activation |
| Keyword(2) | diffusion |
| Keyword(3) | sheet resistance |
| Keyword(4) | SIMS |
| Keyword(5) | free carrier |
| 1st Author's Name | T. Sameshima |
| 1st Author's Affiliation | Tokyo A & T Univ.() |
| 2nd Author's Name | N. Sano |
| 2nd Author's Affiliation | Hightec Systems Co. |
| 3rd Author's Name | M. Naito |
| 3rd Author's Affiliation | Nissin Ion Equipment Co., Ltd. |
| Date | 2007-12-14 |
| Paper # | SDM2007-223 |
| Volume (vol) | vol.107 |
| Number (no) | 388 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |