| Presentation | 2007-11-16 Degradation-Mode Analysis for Highly Reliable GaN-HEMT Yusuke INOUE, Satoshi MASUDA, Masahito KANAMURA, Toshihiro OHKI, Kozo MAKIYAMA, Naoya OKAMOTO, Kenji IMANISHI, Toshihide KIKKAWA, Naoki HARA, Hisao SHIGEMATSU, Kazukiyo JOSHIN, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We analyzed the degradation mode for highly-reliable GaN-HEMTs. It was reported that GaN-HEMT devices had the sudden degradation mode to increase the drain current under the pinch-off condition. In this paper, we found that the gate-leakage current had the correlation with the sudden degradation and proposed a new approach to eliminate sudden-degradation devices. By measuring the gate leakage current before stress test, we can predict the sudden degradation. Using this method, we could select the reliable devices with a life of over 1 x 10^6 hours at high-temperature of 200℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN-HEMT / pinch-off / gate leakage |
| Paper # | R2007-51,ED2007-184,SDM2007-219 |
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| Conference Information | |
| Committee | R |
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| Conference Date | 2007/11/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Reliability(R) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Degradation-Mode Analysis for Highly Reliable GaN-HEMT |
| Sub Title (in English) | |
| Keyword(1) | GaN-HEMT |
| Keyword(2) | pinch-off |
| Keyword(3) | gate leakage |
| 1st Author's Name | Yusuke INOUE |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Satoshi MASUDA |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Masahito KANAMURA |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Toshihiro OHKI |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 5th Author's Name | Kozo MAKIYAMA |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 6th Author's Name | Naoya OKAMOTO |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 7th Author's Name | Kenji IMANISHI |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 8th Author's Name | Toshihide KIKKAWA |
| 8th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 9th Author's Name | Naoki HARA |
| 9th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 10th Author's Name | Hisao SHIGEMATSU |
| 10th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 11th Author's Name | Kazukiyo JOSHIN |
| 11th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 2007-11-16 |
| Paper # | R2007-51,ED2007-184,SDM2007-219 |
| Volume (vol) | vol.107 |
| Number (no) | 318 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |