| Presentation | 2007-11-17 Growth of GaN by hot-mesh CVD : Effect of Ru coated W mesh Yusuke FUKADA, Kazuki ABE, Yuichiro KUROKI, Maki SUEMITSU, Takashi Ito, Yuzuru NARITA, Tetsuro ENDOU, Hideki NAKAZAWA, Masasuke TAKATA, Kanji YASUI, Tadashi AKAHANE, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Gallium nitride (GaN) is wide-bandgap compound semiconductor, which is useful for optoelectronic devices operating in short wavelength and at high temperatures. In our previous study, hot-mesh CVD method using heated tungsten (W) with a mesh structure was investigated for the growth of hexagonal GaN on AlN/SiC/Si substrates. The GaN films grown at the hot-mesh temperature of 1200℃ showed good crystallinity and a strong near-band-edge emission. In order to lower the mesh temperature during the growth, the GaN films on AlN/SiC/Si substrates using Ru-coated W hot-mesh was investigated. By using the Ru-coated W hot mesh, the crystallinity and the PL spectrum of GaN films growth of lower than 1100℃ were further improved. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / ammonia / Ru / W-mesh / Hot-mesh CVD |
| Paper # | CPM2007-115 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2007/11/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of GaN by hot-mesh CVD : Effect of Ru coated W mesh |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | ammonia |
| Keyword(3) | Ru |
| Keyword(4) | W-mesh |
| Keyword(5) | Hot-mesh CVD |
| 1st Author's Name | Yusuke FUKADA |
| 1st Author's Affiliation | Nagaoka University of Technology() |
| 2nd Author's Name | Kazuki ABE |
| 2nd Author's Affiliation | Nagaoka University of Technology |
| 3rd Author's Name | Yuichiro KUROKI |
| 3rd Author's Affiliation | Nagaoka University of Technology |
| 4th Author's Name | Maki SUEMITSU |
| 4th Author's Affiliation | Center of Interdisciplinary Research, Tohoku University |
| 5th Author's Name | Takashi Ito |
| 5th Author's Affiliation | Center of Interdisciplinary Research, Tohoku University |
| 6th Author's Name | Yuzuru NARITA |
| 6th Author's Affiliation | Kyusyu Institute of Technology |
| 7th Author's Name | Tetsuro ENDOU |
| 7th Author's Affiliation | Research of Institute & Technology, Hirosaki University |
| 8th Author's Name | Hideki NAKAZAWA |
| 8th Author's Affiliation | Hirosaki University |
| 9th Author's Name | Masasuke TAKATA |
| 9th Author's Affiliation | Nagaoka University of Technology |
| 10th Author's Name | Kanji YASUI |
| 10th Author's Affiliation | Nagaoka University of Technology |
| 11th Author's Name | Tadashi AKAHANE |
| 11th Author's Affiliation | Nagaoka University of Technology |
| Date | 2007-11-17 |
| Paper # | CPM2007-115 |
| Volume (vol) | vol.107 |
| Number (no) | 325 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |