Presentation | 2007-11-28 High power sub-terahertz electromagnetic wave radiationfrom GaN photoconductive switch Osamu Imafuji, Brahm Pal Singh, Yutaka Hirose, Yasuyuki Fukushima, Shinichi Takigawa, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We present apparently the first observation of sub-terahertz electromagnetic wave emission from GaN based large aperture photoconductive switches (LA-PCSWs) excited by ultraviolet femtosecond laser pulses. The photoconductive layer of the GaN LA-PCSW is doped with carbon giving rise to a resistivity as high as 60M□cm. The absolute energy of the emitted radiation pulses is measured to be 93.3pJ/pulse under 500V bias voltage. The Fourier spectrum of the measured pulse by the time-domain-spectroscopy shows the main components lie in 0.1-0.2THz regime. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / photoconductive switch / terahertz / electromagnetic wave emission |
Paper # | ED2007-201 |
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Committee | ED |
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Conference Date | 2007/11/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | High power sub-terahertz electromagnetic wave radiationfrom GaN photoconductive switch |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | photoconductive switch |
Keyword(3) | terahertz |
Keyword(4) | electromagnetic wave emission |
1st Author's Name | Osamu Imafuji |
1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.() |
2nd Author's Name | Brahm Pal Singh |
2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
3rd Author's Name | Yutaka Hirose |
3rd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
4th Author's Name | Yasuyuki Fukushima |
4th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
5th Author's Name | Shinichi Takigawa |
5th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
Date | 2007-11-28 |
Paper # | ED2007-201 |
Volume (vol) | vol.107 |
Number (no) | 355 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |