| Presentation | 2007-11-27 Emission of terahertz electromagnetic radiation from a 2-dimensional plasmon-resonant emitter of a HEMT structure Hiroyuki HANDA, Yohei HOSONO, Yuki TSUDA, Yahya Moubarak MEZIANI, Tetsuya SUEMITSU, Taiichi OTSUJI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated the 2D plasmon resonant emitter which contains double grating gate structure and estimated its emission characteristics of terahertz electromagnetic wave. This device excites plasma vibrational quantum of electron concentrated inside of a two dimensional electron transit layer electrically, optically, and coherently. By using this oscillation, it can generate terahertz electromagnetic wave through antenna structure of dual interedigitated gate. There are some methods as excitation of plasmon like electrical instability excitation due to direct current bias or photo current injection, photomixing excitation, and femtosecond laser excitation. This report is mainly written about the result of terahertz electromagnetic wave characteristics by using self oscillation mode due to direct current bias and injection of direct photo current, given by FTIR. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | terahertz / plasmon resonance / plasma instability / high-electron-mobility-transistor (HEMT) |
| Paper # | ED2007-195 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Emission of terahertz electromagnetic radiation from a 2-dimensional plasmon-resonant emitter of a HEMT structure |
| Sub Title (in English) | |
| Keyword(1) | terahertz |
| Keyword(2) | plasmon resonance |
| Keyword(3) | plasma instability |
| Keyword(4) | high-electron-mobility-transistor (HEMT) |
| 1st Author's Name | Hiroyuki HANDA |
| 1st Author's Affiliation | Research Institute of electric communication, Tohoku University() |
| 2nd Author's Name | Yohei HOSONO |
| 2nd Author's Affiliation | Research Institute of electric communication, Tohoku University |
| 3rd Author's Name | Yuki TSUDA |
| 3rd Author's Affiliation | Research Institute of electric communication, Tohoku University |
| 4th Author's Name | Yahya Moubarak MEZIANI |
| 4th Author's Affiliation | Research Institute of electric communication, Tohoku University |
| 5th Author's Name | Tetsuya SUEMITSU |
| 5th Author's Affiliation | Research Institute of electric communication, Tohoku University |
| 6th Author's Name | Taiichi OTSUJI |
| 6th Author's Affiliation | Research Institute of electric communication, Tohoku University |
| Date | 2007-11-27 |
| Paper # | ED2007-195 |
| Volume (vol) | vol.107 |
| Number (no) | 355 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |