| Presentation | 2007-11-16 A NEW TDDB DEGRADATION MODEL BASED ON CU ION DRIFT IN CU INTERCONNECT DIELECTRICS Naohito Suzumura, Shigehisa Yamamoto, Kazuya Makabe, Makoto Ogasawara, Junko Komori, Eiichi Murakami, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A new physical model of Time-Dependent Dielectric Breakdown (TDDB) in Cu interconnect dielectrics is proposed. TDDB occurs due to the drift of Cu ions under an electric field E. An activation energy analysis of the leakage current demonstrates that these injected Cu ions affect the conduction mechanism of electrons. The dominant electron conduction mechanism changes from Poole-Frenkel electron current through the Cu barrier dielectrics to Fowler-Nordheim current due to the Cu pile-up at the cathode end. We assumed two possible types of Cu ion drift mechanism, Schottky type or Poole-Frenkel type. The field acceleration model (√E model) of the Poole-Frenkel type fits both TDDB lifetime and activation energy very well. The TDDB lifetime is proportional to the exponential of the square root of the electric field √E. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu interconnect / Low-k dielectrics / Time-dependent dielectric breakdown(TDDB) |
| Paper # | R2007-53,ED2007-186,SDM2007-221 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/11/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A NEW TDDB DEGRADATION MODEL BASED ON CU ION DRIFT IN CU INTERCONNECT DIELECTRICS |
| Sub Title (in English) | |
| Keyword(1) | Cu interconnect |
| Keyword(2) | Low-k dielectrics |
| Keyword(3) | Time-dependent dielectric breakdown(TDDB) |
| 1st Author's Name | Naohito Suzumura |
| 1st Author's Affiliation | Renesas Technology Corp.() |
| 2nd Author's Name | Shigehisa Yamamoto |
| 2nd Author's Affiliation | Renesas Technology Corp. |
| 3rd Author's Name | Kazuya Makabe |
| 3rd Author's Affiliation | Renesas Technology Corp. |
| 4th Author's Name | Makoto Ogasawara |
| 4th Author's Affiliation | Renesas Technology Corp. |
| 5th Author's Name | Junko Komori |
| 5th Author's Affiliation | Renesas Technology Corp. |
| 6th Author's Name | Eiichi Murakami |
| 6th Author's Affiliation | Renesas Technology Corp. |
| Date | 2007-11-16 |
| Paper # | R2007-53,ED2007-186,SDM2007-221 |
| Volume (vol) | vol.107 |
| Number (no) | 319 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |