Presentation 2007-11-01
High-speed and high-efficiency photodiode with p-InGaAs/i-InGaAs absorption layers
Yoshifumi Muramoto, Toshihide Yoshimatsu, Satoshi Kodama, Fumito Nakajima, Tomofumi Furuta, Hiroshi Ito,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We proposed a new design principle for a photodiode structure that has a depleted InGaAs absorption layer combined with a neutral p-type InGaAs absorption layer. When the total thickness of the absorption layer is constant, the thickness ratio between those two layers has an optimum value to minimize the carrier delay time and yield the highest bandwidth. This optimal structure simultaneously provides the highest efficiency for a required bandwidth. A fabricated photodiode with a 0.8-μm InGaAs absorption layer yielded a responsivity of 0.98 A/W and a bandwidth of 50GHz, demonstrating a superior efficiency/bandwidth tradeoff over a conventional pin photodiode. In addition, the fabricated device exhibited better linearity and 5-10dB smaller distortion component (IP_3) indicating its feasibility for analog applications.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Photodiode / High speed / High efficiency / Low distortion
Paper # OCS2007-44,OPE2007-99,LQE2007-85
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Conference Information
Committee LQE
Conference Date 2007/10/25(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-speed and high-efficiency photodiode with p-InGaAs/i-InGaAs absorption layers
Sub Title (in English)
Keyword(1) Photodiode
Keyword(2) High speed
Keyword(3) High efficiency
Keyword(4) Low distortion
1st Author's Name Yoshifumi Muramoto
1st Author's Affiliation NTT Photonics Laboratories, NTT Corporation()
2nd Author's Name Toshihide Yoshimatsu
2nd Author's Affiliation NTT Photonics Laboratories, NTT Corporation:(Present) NTT Network Innovation Laboratories, NTT Corporation
3rd Author's Name Satoshi Kodama
3rd Author's Affiliation NTT Photonics Laboratories, NTT Corporation
4th Author's Name Fumito Nakajima
4th Author's Affiliation NTT Photonics Laboratories, NTT Corporation
5th Author's Name Tomofumi Furuta
5th Author's Affiliation NTT Photonics Laboratories, NTT Corporation
6th Author's Name Hiroshi Ito
6th Author's Affiliation NTT Photonics Laboratories, NTT Corporation
Date 2007-11-01
Paper # OCS2007-44,OPE2007-99,LQE2007-85
Volume (vol) vol.107
Number (no) 302
Page pp.pp.-
#Pages 5
Date of Issue