Presentation | 2007-10-12 Electrical Characterization of Homoepitaxially-Grown pn GaN Diodes Yutaka TOKUDA, Youichi MATSUOKA, Takeshi SEO, Hiroyuki UEDA, Osamu Ishiguro, Narimasa Soejima, Tetsu Kachi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We report the electrical characterization of homoepitaxially-grown pn GaN by MOCVD on free-standing GaN substrates. The 10-μm n GaN (Si~2x10^<16> cm^<-3>) was grown on n^+ GaN, followed by the growth of the 1-μm p GaN (Mg~3x10^<19> cm^<-3>) or followed by the growth of the 0.5-μm p GaN (Mg~5x10^<18> cm^<-3>) and 0.1-μm p^+ GaN (Mg~1x10^<20> cm^<-3>).The mesa structures were fabricated by ICP etching. The wet etching after ICP improves the current-voltage characteristics. The admittance spectroscopy reveals the Mg-related peaks. DLTS measurements show two majority-carrier traps (0.26, 0.59eV) and one minority-carrier trap (0.89eV) with two unclear minority-carrier traps. The 0.89eV minority-carrier trap is dominant with the trap concentration of 1.3x10^<15> cm^<-3>. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / homoepitaxial growth / pn diodes / DLTS |
Paper # | ED2007-173,CPM2007-99,LQE2007-74 |
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Committee | LQE |
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Conference Date | 2007/10/4(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electrical Characterization of Homoepitaxially-Grown pn GaN Diodes |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | homoepitaxial growth |
Keyword(3) | pn diodes |
Keyword(4) | DLTS |
1st Author's Name | Yutaka TOKUDA |
1st Author's Affiliation | Aichi Institute of Technology() |
2nd Author's Name | Youichi MATSUOKA |
2nd Author's Affiliation | Aichi Institute of Technology |
3rd Author's Name | Takeshi SEO |
3rd Author's Affiliation | Aichi Institute of Technology |
4th Author's Name | Hiroyuki UEDA |
4th Author's Affiliation | Toyota Central Research & Development Laboratories Incorporation |
5th Author's Name | Osamu Ishiguro |
5th Author's Affiliation | Toyota Central Research & Development Laboratories Incorporation |
6th Author's Name | Narimasa Soejima |
6th Author's Affiliation | Toyota Central Research & Development Laboratories Incorporation |
7th Author's Name | Tetsu Kachi |
7th Author's Affiliation | Toyota Central Research & Development Laboratories Incorporation |
Date | 2007-10-12 |
Paper # | ED2007-173,CPM2007-99,LQE2007-74 |
Volume (vol) | vol.107 |
Number (no) | 253 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |