Presentation 2007-10-12
Electrical Characterization of Homoepitaxially-Grown pn GaN Diodes
Yutaka TOKUDA, Youichi MATSUOKA, Takeshi SEO, Hiroyuki UEDA, Osamu Ishiguro, Narimasa Soejima, Tetsu Kachi,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We report the electrical characterization of homoepitaxially-grown pn GaN by MOCVD on free-standing GaN substrates. The 10-μm n GaN (Si~2x10^<16> cm^<-3>) was grown on n^+ GaN, followed by the growth of the 1-μm p GaN (Mg~3x10^<19> cm^<-3>) or followed by the growth of the 0.5-μm p GaN (Mg~5x10^<18> cm^<-3>) and 0.1-μm p^+ GaN (Mg~1x10^<20> cm^<-3>).The mesa structures were fabricated by ICP etching. The wet etching after ICP improves the current-voltage characteristics. The admittance spectroscopy reveals the Mg-related peaks. DLTS measurements show two majority-carrier traps (0.26, 0.59eV) and one minority-carrier trap (0.89eV) with two unclear minority-carrier traps. The 0.89eV minority-carrier trap is dominant with the trap concentration of 1.3x10^<15> cm^<-3>.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / homoepitaxial growth / pn diodes / DLTS
Paper # ED2007-173,CPM2007-99,LQE2007-74
Date of Issue

Conference Information
Committee LQE
Conference Date 2007/10/4(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electrical Characterization of Homoepitaxially-Grown pn GaN Diodes
Sub Title (in English)
Keyword(1) GaN
Keyword(2) homoepitaxial growth
Keyword(3) pn diodes
Keyword(4) DLTS
1st Author's Name Yutaka TOKUDA
1st Author's Affiliation Aichi Institute of Technology()
2nd Author's Name Youichi MATSUOKA
2nd Author's Affiliation Aichi Institute of Technology
3rd Author's Name Takeshi SEO
3rd Author's Affiliation Aichi Institute of Technology
4th Author's Name Hiroyuki UEDA
4th Author's Affiliation Toyota Central Research & Development Laboratories Incorporation
5th Author's Name Osamu Ishiguro
5th Author's Affiliation Toyota Central Research & Development Laboratories Incorporation
6th Author's Name Narimasa Soejima
6th Author's Affiliation Toyota Central Research & Development Laboratories Incorporation
7th Author's Name Tetsu Kachi
7th Author's Affiliation Toyota Central Research & Development Laboratories Incorporation
Date 2007-10-12
Paper # ED2007-173,CPM2007-99,LQE2007-74
Volume (vol) vol.107
Number (no) 253
Page pp.pp.-
#Pages 4
Date of Issue