Presentation | 2007-10-12 Ku-band AlGaN/GaN HEMTs with 50W Output Power Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for Ku-band applications. The operating voltage and temperature dependence of output power characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with 23.04 mm gate periphery exhibits output power of over 50W with a power added efficiency (PAE) of 16.5% under VDS=30V, CW operating condition at 13.5GHz. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlGaN / GaN / HEMT / Ku-band / 50W / high power |
Paper # | ED2007-172,CPM2007-98,LQE2007-73 |
Date of Issue |
Conference Information | |
Committee | LQE |
---|---|
Conference Date | 2007/10/4(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Ku-band AlGaN/GaN HEMTs with 50W Output Power |
Sub Title (in English) | |
Keyword(1) | AlGaN |
Keyword(2) | GaN |
Keyword(3) | HEMT |
Keyword(4) | Ku-band |
Keyword(5) | 50W |
Keyword(6) | high power |
1st Author's Name | Yasushi Kashiwabara |
1st Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation() |
2nd Author's Name | Shigenori Takagi |
2nd Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
3rd Author's Name | Kazutoshi Masuda |
3rd Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
4th Author's Name | Keiichi Matsushita |
4th Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
5th Author's Name | Ken Onodera |
5th Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
6th Author's Name | Kazutaka Takagi |
6th Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
7th Author's Name | Hisao Kawasaki |
7th Author's Affiliation | Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation |
8th Author's Name | Yoshiharu Takada |
8th Author's Affiliation | Advanced Electron Devices Laboratory, Corporate R&D Center, Toshiba Corporation |
9th Author's Name | Kunio Tsuda |
9th Author's Affiliation | Advanced Electron Devices Laboratory, Corporate R&D Center, Toshiba Corporation |
Date | 2007-10-12 |
Paper # | ED2007-172,CPM2007-98,LQE2007-73 |
Volume (vol) | vol.107 |
Number (no) | 253 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |