| Presentation | 2007-10-12 Theoretical study of high-frequency performance for AlInN/InGaN heterojunction FETs Kazuki KODAMA, Taketoshi NISHIDA, Kenji SHIOJIMA, Masaaki KUZUHARA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High-frequency performance of AlInN/InGaN heterojunction FETs has been theoretically studied. Analyses were made using 2D ensemble Monte Carlo simulation. Due to the superior electron transport properties of InGaN, high-frequency performance was significantly improved for devices with InGaN or InN as a channel material. Simulation results indicated that the AlInN/InN HEMT devices with a gate length of below 20nm reached a current gain cutoff frequency in a THz frequency range. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaN / InN / HEMT / current gain cutoff frequency / THz |
| Paper # | ED2007-171,CPM2007-97,LQE2007-72 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2007/10/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Theoretical study of high-frequency performance for AlInN/InGaN heterojunction FETs |
| Sub Title (in English) | |
| Keyword(1) | InGaN |
| Keyword(2) | InN |
| Keyword(3) | HEMT |
| Keyword(4) | current gain cutoff frequency |
| Keyword(5) | THz |
| 1st Author's Name | Kazuki KODAMA |
| 1st Author's Affiliation | Department of Electrical and Electronics Engineering, Graduate School of Engineering, University of Fukui() |
| 2nd Author's Name | Taketoshi NISHIDA |
| 2nd Author's Affiliation | Department of Electrical and Electronics Engineering, Graduate School of Engineering, University of Fukui |
| 3rd Author's Name | Kenji SHIOJIMA |
| 3rd Author's Affiliation | Department of Electrical and Electronics Engineering, Graduate School of Engineering, University of Fukui |
| 4th Author's Name | Masaaki KUZUHARA |
| 4th Author's Affiliation | Department of Electrical and Electronics Engineering, Graduate School of Engineering, University of Fukui |
| Date | 2007-10-12 |
| Paper # | ED2007-171,CPM2007-97,LQE2007-72 |
| Volume (vol) | vol.107 |
| Number (no) | 253 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |