| Presentation | 2007-10-12 Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs Atsushi NAKAJIMA, Kazushige HORIO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. When the drain voltage is raised abruptly, electrons are injected into the buffer layer and captured by deep donors, and when it is lowered abruptly, the drain currents remain at low values for some periods and begin to increase slowly as the deep donors begin to emit electrons, showing drain-lag behavior. The gate lag could also occur due to deep levels in the buffer layer, and it is correlated with relatively high source access resistance in AlGaN/GaN HEMTs. It is shown that the current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because the trapping effects become more significant. The drain lag could be a major cause of current slump in the case of higher off-state drain voltage. It is suggested that to minimize current slump in AlGaN/GaN HEMTs, an acceptor density in the buffer layer should be made low, although there may be a trade-off relationship between reducing current slump and obtaining sharp current cutoff. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / HEMT / trap / current collapse / drain lag / gate lag / access resistance / device simulation |
| Paper # | ED2007-169,CPM2007-95,LQE2007-70 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2007/10/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HEMT |
| Keyword(3) | trap |
| Keyword(4) | current collapse |
| Keyword(5) | drain lag |
| Keyword(6) | gate lag |
| Keyword(7) | access resistance |
| Keyword(8) | device simulation |
| 1st Author's Name | Atsushi NAKAJIMA |
| 1st Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology() |
| 2nd Author's Name | Kazushige HORIO |
| 2nd Author's Affiliation | Faculty of Systems Engineering, Shibaura Institute of Technology |
| Date | 2007-10-12 |
| Paper # | ED2007-169,CPM2007-95,LQE2007-70 |
| Volume (vol) | vol.107 |
| Number (no) | 253 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |