| Presentation | 2007-10-12 Study on AlGaN/GaN HEMT structures on 4-inch Si(111) substrates with thick buffer layers Yutaka TERADA, Takaaki SUZUE, Hiroyasu ISHIKAWA, Takashi EGAWA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated GaN/AlN multilayers for thick buffer of AlGaN/GaN HEMTs on Si. Epiwafer bowing increased with increasing the total epilayer thickness. But epiwafer bowing did not increase when the thickness of GaN was thin. In the investigation of temperature dependent Hall measurement, Hall mobilities increased with increasing the number of pairs in multilayers. It was due to decreasing of dislocation in the interface between GaN and multilayers. Since so many cracks observed in epiwafer with 100 pair multilayers, 70 pairs are suitable. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 4-inch / Si substrate / GaN / AlGaN/GaN / MOCVD / HEMT |
| Paper # | ED2007-168,CPM2007-94,LQE2007-69 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2007/10/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on AlGaN/GaN HEMT structures on 4-inch Si(111) substrates with thick buffer layers |
| Sub Title (in English) | |
| Keyword(1) | 4-inch |
| Keyword(2) | Si substrate |
| Keyword(3) | GaN |
| Keyword(4) | AlGaN/GaN |
| Keyword(5) | MOCVD |
| Keyword(6) | HEMT |
| 1st Author's Name | Yutaka TERADA |
| 1st Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology() |
| 2nd Author's Name | Takaaki SUZUE |
| 2nd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 3rd Author's Name | Hiroyasu ISHIKAWA |
| 3rd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 4th Author's Name | Takashi EGAWA |
| 4th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2007-10-12 |
| Paper # | ED2007-168,CPM2007-94,LQE2007-69 |
| Volume (vol) | vol.107 |
| Number (no) | 253 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |