| Presentation | 2007-10-12 Low leakage current ITO Schottky electrode for AlGaN/GaN HEMT Keita MATSUDA, Takeshi KAWASAKI, Ken NAKATA, Takeshi IGARASHI, Seiji YAEGASSI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and high breakdown characteristics. However, conventional Ni/Au Schottky electrode has high reverse leakage current[1], which deteriorates reliability and increases power dissipation. Now we report that the reduction of Schottky leakage current and low leakage current HEMT characteristics were achieved by using indium-tin-oxide (ITO) electrode instead of Ni/Au electrode. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ITO electrode / lower leakage current / Schottky characteristics / temperature dependence / HEMT characteristics / gate leakage current |
| Paper # | ED2007-167,CPM2007-93,LQE2007-68 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2007/10/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low leakage current ITO Schottky electrode for AlGaN/GaN HEMT |
| Sub Title (in English) | |
| Keyword(1) | ITO electrode |
| Keyword(2) | lower leakage current |
| Keyword(3) | Schottky characteristics |
| Keyword(4) | temperature dependence |
| Keyword(5) | HEMT characteristics |
| Keyword(6) | gate leakage current |
| 1st Author's Name | Keita MATSUDA |
| 1st Author's Affiliation | Eudyna Devices Inc.() |
| 2nd Author's Name | Takeshi KAWASAKI |
| 2nd Author's Affiliation | Eudyna Devices Inc. |
| 3rd Author's Name | Ken NAKATA |
| 3rd Author's Affiliation | Eudyna Devices Inc. |
| 4th Author's Name | Takeshi IGARASHI |
| 4th Author's Affiliation | Eudyna Devices Inc. |
| 5th Author's Name | Seiji YAEGASSI |
| 5th Author's Affiliation | Eudyna Devices Inc. |
| Date | 2007-10-12 |
| Paper # | ED2007-167,CPM2007-93,LQE2007-68 |
| Volume (vol) | vol.107 |
| Number (no) | 253 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |