| Presentation | 2007-10-12 Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) Plane Masayuki KURODA, Tetsuzo UEDA, Tsuyoshi TANAKA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN-based compound semiconductors are attractive for low-loss power switching devices owing to the high breakdown field and the high saturation electron velocity. Conventional AlGaN/GaN HFETs (Heterojunction Field Effect Transistors) have been fabricated on (0001) c-plane across which the spontaneous and piezoelectric polarization fields produce the extraordinary high sheet carrier concentrations. These sheet carriers made it difficult to achieve normally-off operation, which is strongly desired for the safety operation of power switching devices. Use of non-polar (11-20) a-plane is expected to easily achieve the normally-off operation, since the plane is free from the above-mentioned polarization induced charges. In this paper, we report on normally-off operation of non-polar a-plane AlGaN/GaN metal-insulator-semiconductor (MIS)-HFETs with the threshold voltage of +1.3 V. High drain current of 112 mA/mm is also achieved by the recessed MIS-gate structure with the improved crystal quality on thick AlN buffer layers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN HFET / Non-polar / Normally-off operation |
| Paper # | ED2007-166,CPM2007-92,LQE2007-67 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2007/10/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) Plane |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HFET |
| Keyword(2) | Non-polar |
| Keyword(3) | Normally-off operation |
| 1st Author's Name | Masayuki KURODA |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Tetsuzo UEDA |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Tsuyoshi TANAKA |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| Date | 2007-10-12 |
| Paper # | ED2007-166,CPM2007-92,LQE2007-67 |
| Volume (vol) | vol.107 |
| Number (no) | 253 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |