Presentation 2007-10-11
UV-response characteristics of insulator/n-GaN MIS structures for sensor application
Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume,
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Abstract(in English) For UV-detector application, n-GaN Metal-Insulator-Semiconductor(MIS) structure was fabricated using AlO_x, layer which was deposited on n-GaN assisted by Electron Cyclotron Resonance(ECR)-plasma. Diethyl aluminum ethoxide(DEA-E) was used as a source material for AlO_x deposition. In the AlO_x/GaN MIS structure, the experimental C-V curve was close to the calculated one, and the C-V characteristics were almost independent of temperature. These results indicated a relatively low density of states at the AlO_x/n-GaN interface. The capacitance at the depletion region showed a relatively fast response to an UV illumination. We also found that the peak value of capacitance under illumination showed less temperature dependence, indicating the operation stability of the AlO_x/n-GaN structure.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / AlGaN / Al_2O_3 / MIS / C-V / high temperature / UV-response / UV-detector / Flame detector
Paper # ED2007-164,CPM2007-90,LQE2007-65
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Conference Information
Committee LQE
Conference Date 2007/10/4(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) UV-response characteristics of insulator/n-GaN MIS structures for sensor application
Sub Title (in English)
Keyword(1) GaN
Keyword(2) AlGaN
Keyword(3) Al_2O_3
Keyword(4) MIS
Keyword(5) C-V
Keyword(6) high temperature
Keyword(7) UV-response
Keyword(8) UV-detector
Keyword(9) Flame detector
1st Author's Name Chihoko Mizue
1st Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido University()
2nd Author's Name Tetsuya Matsuyama
2nd Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido University
3rd Author's Name Junji Kotani
3rd Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido University
4th Author's Name Marcin Miczek
4th Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido University
5th Author's Name Tamotsu Hashizume
5th Author's Affiliation Research Center for Integrated Quantum Electronics, Hokkaido University
Date 2007-10-11
Paper # ED2007-164,CPM2007-90,LQE2007-65
Volume (vol) vol.107
Number (no) 253
Page pp.pp.-
#Pages 4
Date of Issue