Presentation | 2007-10-11 UV-response characteristics of insulator/n-GaN MIS structures for sensor application Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | For UV-detector application, n-GaN Metal-Insulator-Semiconductor(MIS) structure was fabricated using AlO_x, layer which was deposited on n-GaN assisted by Electron Cyclotron Resonance(ECR)-plasma. Diethyl aluminum ethoxide(DEA-E) was used as a source material for AlO_x deposition. In the AlO_x/GaN MIS structure, the experimental C-V curve was close to the calculated one, and the C-V characteristics were almost independent of temperature. These results indicated a relatively low density of states at the AlO_x/n-GaN interface. The capacitance at the depletion region showed a relatively fast response to an UV illumination. We also found that the peak value of capacitance under illumination showed less temperature dependence, indicating the operation stability of the AlO_x/n-GaN structure. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / AlGaN / Al_2O_3 / MIS / C-V / high temperature / UV-response / UV-detector / Flame detector |
Paper # | ED2007-164,CPM2007-90,LQE2007-65 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2007/10/4(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | UV-response characteristics of insulator/n-GaN MIS structures for sensor application |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | AlGaN |
Keyword(3) | Al_2O_3 |
Keyword(4) | MIS |
Keyword(5) | C-V |
Keyword(6) | high temperature |
Keyword(7) | UV-response |
Keyword(8) | UV-detector |
Keyword(9) | Flame detector |
1st Author's Name | Chihoko Mizue |
1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
2nd Author's Name | Tetsuya Matsuyama |
2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
3rd Author's Name | Junji Kotani |
3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
4th Author's Name | Marcin Miczek |
4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
5th Author's Name | Tamotsu Hashizume |
5th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
Date | 2007-10-11 |
Paper # | ED2007-164,CPM2007-90,LQE2007-65 |
Volume (vol) | vol.107 |
Number (no) | 253 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |