Presentation | 2007-10-11 Deep-UV Lasing of AlGaN Multiple Quantum Well Lasers and Its Anisotropic Polarization Properties H. Kawanishi, E. Niikura, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | AlGaN wide-gap semiconductor is promising for UV to Deep-UV laser and light emitting diodes. The AlGaN has optical anisotropic properties, such as anisotropic polarization and anisotropic surface and edge emission, which originate in valence-band structure. This propertie affects to lasing mode, optical polarization of emitted light, and apparent quantum efficiency. In this report, we summarize our recent experimental results and our conclusions. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Deep-UV semiconductor laser / Optical anisotropic property / Crystal-field sprit-off hole band / AlGaN quantum well |
Paper # | ED2007-163,CPM2007-89,LQE2007-64 |
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Committee | LQE |
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Conference Date | 2007/10/4(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Deep-UV Lasing of AlGaN Multiple Quantum Well Lasers and Its Anisotropic Polarization Properties |
Sub Title (in English) | |
Keyword(1) | Deep-UV semiconductor laser |
Keyword(2) | Optical anisotropic property |
Keyword(3) | Crystal-field sprit-off hole band |
Keyword(4) | AlGaN quantum well |
1st Author's Name | H. Kawanishi |
1st Author's Affiliation | Faculty of Engineering, Kohgakuin University() |
2nd Author's Name | E. Niikura |
2nd Author's Affiliation | Faculty of Engineering, Kohgakuin University |
Date | 2007-10-11 |
Paper # | ED2007-163,CPM2007-89,LQE2007-64 |
Volume (vol) | vol.107 |
Number (no) | 253 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |