Presentation 2007-10-11
Deep-UV Lasing of AlGaN Multiple Quantum Well Lasers and Its Anisotropic Polarization Properties
H. Kawanishi, E. Niikura,
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Abstract(in English) AlGaN wide-gap semiconductor is promising for UV to Deep-UV laser and light emitting diodes. The AlGaN has optical anisotropic properties, such as anisotropic polarization and anisotropic surface and edge emission, which originate in valence-band structure. This propertie affects to lasing mode, optical polarization of emitted light, and apparent quantum efficiency. In this report, we summarize our recent experimental results and our conclusions.
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Keyword(in English) Deep-UV semiconductor laser / Optical anisotropic property / Crystal-field sprit-off hole band / AlGaN quantum well
Paper # ED2007-163,CPM2007-89,LQE2007-64
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Committee LQE
Conference Date 2007/10/4(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Deep-UV Lasing of AlGaN Multiple Quantum Well Lasers and Its Anisotropic Polarization Properties
Sub Title (in English)
Keyword(1) Deep-UV semiconductor laser
Keyword(2) Optical anisotropic property
Keyword(3) Crystal-field sprit-off hole band
Keyword(4) AlGaN quantum well
1st Author's Name H. Kawanishi
1st Author's Affiliation Faculty of Engineering, Kohgakuin University()
2nd Author's Name E. Niikura
2nd Author's Affiliation Faculty of Engineering, Kohgakuin University
Date 2007-10-11
Paper # ED2007-163,CPM2007-89,LQE2007-64
Volume (vol) vol.107
Number (no) 253
Page pp.pp.-
#Pages 4
Date of Issue