Presentation 2007-10-11
340nm-band high-power UV-LED using p-type InAlGaN layers and high-quality AlN buffer
Sachie FUJIKAWA, Takayoshi TAKANO, Yukihiro KONDO, Hideki HIRAYAMA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) 230-350nm-band high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) or laser diodes (LDs) are very attractive for the application to white lighting, medical fields, etc. In this study, we realized high-power operation of quaternary InAlGaN-based UV-LEDs with p-type InAlGaN layers fabricated on high-quality AlN buffer on sapphire. We revealed that Mg-doped InAlGaN layer is superior to Mg-doped AlGaN layer for use as p-type layers of UV-LEDs. We obtained output power of 8.4mW and the external quantum efficiency (EQE) of 0.9% from 346 nm InAlGaN-based UV-LED under room temperature CW operation by optimizing electron injection into QWs and by improving the crystal quality of AlN/AlGaN template.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) quaternary InAlGaN / UV-LEDs / p-InAlGaN / AlN / MOCVD
Paper # ED2007-161,CPM2007-87,LQE2007-62
Date of Issue

Conference Information
Committee LQE
Conference Date 2007/10/4(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 340nm-band high-power UV-LED using p-type InAlGaN layers and high-quality AlN buffer
Sub Title (in English)
Keyword(1) quaternary InAlGaN
Keyword(2) UV-LEDs
Keyword(3) p-InAlGaN
Keyword(4) AlN
Keyword(5) MOCVD
1st Author's Name Sachie FUJIKAWA
1st Author's Affiliation RIKEN()
2nd Author's Name Takayoshi TAKANO
2nd Author's Affiliation Matsushita Electric Works, Ltd.
3rd Author's Name Yukihiro KONDO
3rd Author's Affiliation Matsushita Electric Works, Ltd.
4th Author's Name Hideki HIRAYAMA
4th Author's Affiliation RIKEN
Date 2007-10-11
Paper # ED2007-161,CPM2007-87,LQE2007-62
Volume (vol) vol.107
Number (no) 253
Page pp.pp.-
#Pages 6
Date of Issue