| Presentation | 2007-10-11 Effects of trace moisture in NH_3 gas on electroluminescence intensity of InGaN LED : Moisture control in NH_3 gas for MOVPE growth of LED structure Hirotaka MANGYOU, Hiroyuki ONO, Yoshihiko KOBAYASHI, Koh MATSUMOTO, Kazunobu SHIBUYA, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have been developing nitride-semiconductor-related technologies, such as Metal Organic Vapor Phase Epitaxy (MOVPE), NH_3 gas purification and trace moisture analysis techniques in NH_3 gas. The moisture in NH_3 gas is likely to have an influence on the film growth of the GaN by MOVPE. In this research, electroluminescence (EL) intensity of LED was shown to be decreased by the incorporation of moisture in the rector atmosphere into InGaN/GaN quantum well layers. We have also demonstrated that NH_3 gas purifier can effectively eliminate a trace of moisture, so that a high and constant purity NH_3 gas is continuously supplied to the reactor, which is confirmed by on-site measurement of trace moisture by CRDS, and also by ex-situ characterization, by EL and SIMS measurement. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / InGaN/GaN multi quantum well structure / purifier / NH_3gas |
| Paper # | ED2007-160,CPM2007-86,LQE2007-61 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2007/10/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of trace moisture in NH_3 gas on electroluminescence intensity of InGaN LED : Moisture control in NH_3 gas for MOVPE growth of LED structure |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | InGaN/GaN multi quantum well structure |
| Keyword(3) | purifier |
| Keyword(4) | NH_3gas |
| 1st Author's Name | Hirotaka MANGYOU |
| 1st Author's Affiliation | Leading Edge Technology Development Department, Business Strategy Planning Division, Electronics Group, TAIYO NIPPON SANSO Corporation() |
| 2nd Author's Name | Hiroyuki ONO |
| 2nd Author's Affiliation | Specialty gas analysis division Analysis technology center Tsukuba Laboratories Development & Engineering, TAIYO NIPPON SANSO Corporation |
| 3rd Author's Name | Yoshihiko KOBAYASHI |
| 3rd Author's Affiliation | Leading Edge Technology Development Department, Business Strategy Planning Division, Electronics Group, TAIYO NIPPON SANSO Corporation |
| 4th Author's Name | Koh MATSUMOTO |
| 4th Author's Affiliation | Leading Edge Technology Development Department, Business Strategy Planning Division, Electronics Group, TAIYO NIPPON SANSO Corporation |
| 5th Author's Name | Kazunobu SHIBUYA |
| 5th Author's Affiliation | Leading Edge Technology Development Department, Business Strategy Planning Division, Electronics Group, TAIYO NIPPON SANSO Corporation |
| Date | 2007-10-11 |
| Paper # | ED2007-160,CPM2007-86,LQE2007-61 |
| Volume (vol) | vol.107 |
| Number (no) | 253 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |