| Presentation | 2007-10-11 High Efficiency Ultraviolet LEDs on Si Using InAlGaN Multi-Quantum-Wells with High Indium Contents Yasuyuki FUKUSHIMA, Yuji TAKASE, Manabu USUDA, Kenji ORITA, Tetsuzo UEDA, Tsuyoshi TANAKA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ultraviolet Light Emitting Diodes (UV-LEDs) are promising for various applications such as photocatalyst or excitation source for white LEDs. In this paper, we report on high-brightness UV-LEDs on Si substrate aiming at the low cost fabrication. InAlGaN quaternary alloy with high In content is used in the active layer in which localized excitons screen the effect of the non-radiative recombination center caused by the dislocations. The InAlGaN multi-quantum-well active layers exhibit very high internal quantum efficiency of 15% at around 350nm which is as comparable high as that on SiC for the UV-emission. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ultraviolet Light Emitting Diodes / Si substrate / III-V Nitride / InAlGaN quaternary alloy |
| Paper # | ED2007-159,CPM2007-85,LQE2007-60 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2007/10/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Efficiency Ultraviolet LEDs on Si Using InAlGaN Multi-Quantum-Wells with High Indium Contents |
| Sub Title (in English) | |
| Keyword(1) | Ultraviolet Light Emitting Diodes |
| Keyword(2) | Si substrate |
| Keyword(3) | III-V Nitride |
| Keyword(4) | InAlGaN quaternary alloy |
| 1st Author's Name | Yasuyuki FUKUSHIMA |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Yuji TAKASE |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Manabu USUDA |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 4th Author's Name | Kenji ORITA |
| 4th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 5th Author's Name | Tetsuzo UEDA |
| 5th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 6th Author's Name | Tsuyoshi TANAKA |
| 6th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| Date | 2007-10-11 |
| Paper # | ED2007-159,CPM2007-85,LQE2007-60 |
| Volume (vol) | vol.107 |
| Number (no) | 253 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |