| Presentation | 2007-10-11 Fabrications of GaN/AlGaN nanocolumn LEDs by rf-assisted molecular beam epitaxy Hiroto Sekiguchi, Kei Kato, Jo Tanaka, Akihiko Kikuchi, Katsumi Kishino, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN nanocolumns have excellent optical characteristics due to dislocation-free nature. GaN/AlGaN nanocolumn LEDs grown on n-(111) Si substrates by RF-MBE was fabricated for the first time. Clear diodes characteristics with 4.0 V of turn-on voltage and ultraviolet emission with peak-wavelength of 354nm was observed at room temperature. Although FWHM with macro-EL was 278meV, a smaller FWHM value of 119meV with micro-EL was observed. As the spatial non-uniformity in thickness and diameter of GaN MQDs may bring about the broad spectrum, the improved uniformity by nanocolumn regular-arrangement will make the narrower EL-FWHM. When Al composition of p-Al_xGa_<1-x>N was changed from 8.8 to 25.1%, the high Al content (x=25.1%) of p-AlGaN leads to narrow the FWHM as against low Al contents (x=8.8, 13.1%) due to suppress carrier overflow. The optimizations of the device sturucture, the electrode structures and the growth condition of p-type layer are needed to obtain high-performance LEDs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nanocolumn / Nanorod / Nanowire / Nitride Semiconductor / LED / Molecular Beam Epitaxy |
| Paper # | ED2007-158,CPM2007-84,LQE2007-59 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2007/10/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrications of GaN/AlGaN nanocolumn LEDs by rf-assisted molecular beam epitaxy |
| Sub Title (in English) | |
| Keyword(1) | Nanocolumn |
| Keyword(2) | Nanorod |
| Keyword(3) | Nanowire |
| Keyword(4) | Nitride Semiconductor |
| Keyword(5) | LED |
| Keyword(6) | Molecular Beam Epitaxy |
| 1st Author's Name | Hiroto Sekiguchi |
| 1st Author's Affiliation | Department of Electrical and Electronics Engineering, Sopphia University:CREST, Japan Science and Technology Agency() |
| 2nd Author's Name | Kei Kato |
| 2nd Author's Affiliation | Department of Electrical and Electronics Engineering, Sopphia University |
| 3rd Author's Name | Jo Tanaka |
| 3rd Author's Affiliation | Department of Electrical and Electronics Engineering, Sopphia University |
| 4th Author's Name | Akihiko Kikuchi |
| 4th Author's Affiliation | Department of Electrical and Electronics Engineering, Sopphia University:CREST, Japan Science and Technology Agency |
| 5th Author's Name | Katsumi Kishino |
| 5th Author's Affiliation | Department of Electrical and Electronics Engineering, Sopphia University:CREST, Japan Science and Technology Agency |
| Date | 2007-10-11 |
| Paper # | ED2007-158,CPM2007-84,LQE2007-59 |
| Volume (vol) | vol.107 |
| Number (no) | 253 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |