Presentation 2007-10-11
Micro photoluminescence spectroscopy of single InGaN/GaN nanocolumn
Akio KANETA, Akinobu KANAI, Mitsuru FUNATO, Yoichi KAWAKAMI, Akihiko KIKUCHI, Katsumi KISHINO,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) The micro photoluminescence (PL) and micro time-resolved PL spectroscopy have been performed on a single InGaN/GaN nanocolumn structure grown by nitrogen plasma assisted molecular beam epitaxy. The PL spectra of single InGaN/GaN nanocolumn consist of about tens sharp emission peaks, which position does not change even if the photo-excitation carrier density increases, unlike the conventional c-plane InGaN/GaN quantum well structures (QWs). Moreover, the PL lifetime of InGaN/GaN nanocolumn is two orders of magnitude faster than that taken at the same wavelength in conventional InGaN/GaN QWs. These results suggest that the piezoelectric polarization field is suppressed in InGaN/GaN nanocolumn, and the small localized centers are formed in InGaN/GaN nanocolumn.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaN/GaN nanocolumn / sharp emission peak / PL lifetime / piezoelectric polarization field / localized centers
Paper # ED2007-157,CPM2007-83,LQE2007-58
Date of Issue

Conference Information
Committee LQE
Conference Date 2007/10/4(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Micro photoluminescence spectroscopy of single InGaN/GaN nanocolumn
Sub Title (in English)
Keyword(1) InGaN/GaN nanocolumn
Keyword(2) sharp emission peak
Keyword(3) PL lifetime
Keyword(4) piezoelectric polarization field
Keyword(5) localized centers
1st Author's Name Akio KANETA
1st Author's Affiliation Department of Electronic Science and Engineering, Kyoto University, Katsura Campus, Kyoto University:CREST, JST()
2nd Author's Name Akinobu KANAI
2nd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University, Katsura Campus, Kyoto University
3rd Author's Name Mitsuru FUNATO
3rd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University, Katsura Campus, Kyoto University:CREST, JST
4th Author's Name Yoichi KAWAKAMI
4th Author's Affiliation Department of Electronic Science and Engineering, Kyoto University, Katsura Campus, Kyoto University:CREST, JST
5th Author's Name Akihiko KIKUCHI
5th Author's Affiliation Department of Electrical and Electoronics Engineering, Sophia University:CREST, JST
6th Author's Name Katsumi KISHINO
6th Author's Affiliation Department of Electrical and Electoronics Engineering, Sophia University:CREST, JST
Date 2007-10-11
Paper # ED2007-157,CPM2007-83,LQE2007-58
Volume (vol) vol.107
Number (no) 253
Page pp.pp.-
#Pages 6
Date of Issue