Presentation 2007-10-11
Polarization Properties in III-nitride Quantum Wells with Various Substrate Orientations
A. Atsushi YAMAGUCHI,
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Abstract(in English) Polarization properties in III-nitride quantum wells with various substrate orientations have been investigated theoretically. It is found that in-plane optical anisotropy appears in non C-plane surfaces, and that its direction is determined by the competition of quantum confinement effect and strain effect. It is also shown that the optical anisotropy is very sensitive to in-plane strain anisotropy. Meanwhile, it is known that AlGaN films with high Al composition mainly emit the light polarized in the c-direction and this causes low emission efficiency in the c-face based devices. It is predicted, in this study, that this unfavorable polarization can be switched into favorable in-plane polarization by decreasing quantum well width and/or introducing in-plane compressive strain.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) optical anisotropy / GaN / AlGaN / valence band / strain / calculation
Paper # ED2007-156,CPM2007-82,LQE2007-57
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Committee LQE
Conference Date 2007/10/4(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Polarization Properties in III-nitride Quantum Wells with Various Substrate Orientations
Sub Title (in English)
Keyword(1) optical anisotropy
Keyword(2) GaN
Keyword(3) AlGaN
Keyword(4) valence band
Keyword(5) strain
Keyword(6) calculation
1st Author's Name A. Atsushi YAMAGUCHI
1st Author's Affiliation Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology()
Date 2007-10-11
Paper # ED2007-156,CPM2007-82,LQE2007-57
Volume (vol) vol.107
Number (no) 253
Page pp.pp.-
#Pages 6
Date of Issue