Presentation 2007-10-25
IsSpice Modeling of Micromachined HEMT with Resonant Cantilever Gate
Irina KHMYROVA,
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Abstract(in English) In this paper we developed lumped equivalent circuit model for the resonant sensor based on micromachined high-electron mobility transistor (HEMT) in which suspended resonant cantilever plays a role of a floating gate. Mechanical oscillations of the cantilever and electromechanical transducer are represented by relevant circuit components. The developed equivalent circuit has been used in IsSpice simulation of the performance of the micromachined HEMT under consideration. The simulated source-drain current reveals a peak at a frequency corresponding to resonant frequency of cantilever mechanical oscillations. The effect of damping of such oscillations and contribution of ungated parts of 2DEG channel to the HEMT performance have been demonstrated. The proposed approach can be used for optimization of resonant sensors based on micromacined HEMT.
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Keyword(in English) Micromachined HEMT / resonant cantilever / floating gate / electrical equivalent circuit
Paper # EMCJ2007-59,MW2007-106
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Committee EMCJ
Conference Date 2007/10/18(1days)
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Registration To Electromagnetic Compatibility (EMCJ)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) IsSpice Modeling of Micromachined HEMT with Resonant Cantilever Gate
Sub Title (in English)
Keyword(1) Micromachined HEMT
Keyword(2) resonant cantilever
Keyword(3) floating gate
Keyword(4) electrical equivalent circuit
1st Author's Name Irina KHMYROVA
1st Author's Affiliation Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu City, Fukushima Pref.()
Date 2007-10-25
Paper # EMCJ2007-59,MW2007-106
Volume (vol) vol.107
Number (no) 278
Page pp.pp.-
#Pages 4
Date of Issue