| Presentation | 2007-10-12 Surface control of AlGaN/GaN structure and its application to transistors M. Tajima, J. Kotani, T. Tamura, T. Hashizume, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated the change in DC characteristics of AlGaN/GaN HEMTs after the gate-and drain-bias stress at high temperatures. A pronounced reduction of drain current and a degradation of transfer characteristics were observed after an off-state stress at 220℃. To improve the operation stability of the HEMT device, we have developed a surface control process utilizing an ultrathin Al layer. The process was very effective in reducing gate leakage currents. The device with the surface control process showed no degradation in DC characteristics even after the off-state stress at 220℃. It is likely that the surface process effectively suppress a trap- and/or defect-assisted multiplication of defect levels near AlGaN surface during the BT stress. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN / HEMT / surface control / stability / reliability |
| Paper # | ED2007-170,CPM2007-96,LQE2007-71 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2007/10/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Surface control of AlGaN/GaN structure and its application to transistors |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | HEMT |
| Keyword(4) | surface control |
| Keyword(5) | stability |
| Keyword(6) | reliability |
| 1st Author's Name | M. Tajima |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | J. Kotani |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 3rd Author's Name | T. Tamura |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 4th Author's Name | T. Hashizume |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| Date | 2007-10-12 |
| Paper # | ED2007-170,CPM2007-96,LQE2007-71 |
| Volume (vol) | vol.107 |
| Number (no) | 252 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |