Presentation 2007-10-30
Coarse-Grain Method for Quantum-Transport Simulations of Nanoscale MOSFETs
Gennady. V. MIL'NIKOV, Nobuya MORI, Yoshinari KAMAKURA, Tatsuya EZAKI,
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Abstract(in English) We present a theory of quantum transport based on spectral expansion of the Green's function in an open system. In practice, this representation makes it possible to avoid discretization of device area and achieve much higher numerical accuracy with less computation burden compared to common grid schemes. We formulate a numerical method which enables one to propagate all observables of interest through the device area so that the major portion of the computational time scales linearly with the device volume. As an illustration, we apply the method to quantum ballistic electron transport in model 3D MOSFETs.
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Keyword(in English) silicon / MOSFET / quantum transport / non-equilibrium Green's function method
Paper # VLD2007-52,SDM2007-196
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Committee VLD
Conference Date 2007/10/23(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Coarse-Grain Method for Quantum-Transport Simulations of Nanoscale MOSFETs
Sub Title (in English)
Keyword(1) silicon
Keyword(2) MOSFET
Keyword(3) quantum transport
Keyword(4) non-equilibrium Green's function method
1st Author's Name Gennady. V. MIL'NIKOV
1st Author's Affiliation Graduate School of Engineering, Osaka University()
2nd Author's Name Nobuya MORI
2nd Author's Affiliation Graduate School of Engineering, Osaka University
3rd Author's Name Yoshinari KAMAKURA
3rd Author's Affiliation Graduate School of Engineering, Osaka University
4th Author's Name Tatsuya EZAKI
4th Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University
Date 2007-10-30
Paper # VLD2007-52,SDM2007-196
Volume (vol) vol.107
Number (no) 295
Page pp.pp.-
#Pages 4
Date of Issue