| Presentation | 2007-10-05 High Mobility Bottom Gate μc-Si TFT Fabricated by Microwave Plasma CVD Akihiko HIROE, Akinobu TERAMOTO, Tadahiro OHMI, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | μc-Si has been deposited by microwave (2.45GHz) plasma CVD. (220) preferentially oriented film and (111) preferentially oriented film has been deposited and compared. (220) preferentially oriented film shows continuous cross sectional morphology, and has less dangling bond density compared with (111) preferentially oriented film. Bottom gate TFT has been fabricated with (220) preferentially oriented μc-Si. Mobility of about 1.4cm^2/Vsec and on/off ratio of more than 10^5 has been achieved for W/L=20/4μm bottom gate transistor after hydrogen plasma treatment. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Microwave / Plasma CVD / μc-Si / TFT |
| Paper # | SDM2007-186 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2007/9/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Mobility Bottom Gate μc-Si TFT Fabricated by Microwave Plasma CVD |
| Sub Title (in English) | |
| Keyword(1) | Microwave |
| Keyword(2) | Plasma CVD |
| Keyword(3) | μc-Si |
| Keyword(4) | TFT |
| 1st Author's Name | Akihiko HIROE |
| 1st Author's Affiliation | Ohmi Lab. New Industry Creation Hatchery Center (NICHe) Tohoku University() |
| 2nd Author's Name | Akinobu TERAMOTO |
| 2nd Author's Affiliation | Ohmi Lab. New Industry Creation Hatchery Center (NICHe) Tohoku University |
| 3rd Author's Name | Tadahiro OHMI |
| 3rd Author's Affiliation | Ohmi Lab. New Industry Creation Hatchery Center (NICHe) Tohoku University |
| Date | 2007-10-05 |
| Paper # | SDM2007-186 |
| Volume (vol) | vol.107 |
| Number (no) | 245 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |