| Presentation | 2007-10-04 Ultrathin HfO_xN_y gate insulator formations utilizing ECR plasma process Yusuke NAKANO, Masaki SATOH, Shun-ichiro OHMI, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Post deposition annealing (PDA) process such as rapid cooling process was investigated to improve electrical characteristics of HfO_xN_y films formed by ECR Ar/O_2 plasma oxidation of ultra-thin HfN films. After 1 nm-thick HfN film deposition, high vacuum annealing (HVA, 700℃/5min) and PDA (900℃/1 min) were carried out. In this research, a cooling rate after the PDA was shortened by increasing the N_2 cooling gas flow rate from 0.8 l/min to 100 l/min. A hysteresis in C-V curve was reduced and equivalent oxide thickness (EOT) was decreased from 1.26nm (N_2 flow rate : 0.8 l/min) to 0.96nm (N_2 flow rate : 100 l/min). |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HfO_xN_y / Electron Cyclotron Resonance (ECR) / Plasma Oxidation / high-k gate insulator |
| Paper # | SDM2007-178 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2007/9/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ultrathin HfO_xN_y gate insulator formations utilizing ECR plasma process |
| Sub Title (in English) | |
| Keyword(1) | HfO_xN_y |
| Keyword(2) | Electron Cyclotron Resonance (ECR) |
| Keyword(3) | Plasma Oxidation |
| Keyword(4) | high-k gate insulator |
| 1st Author's Name | Yusuke NAKANO |
| 1st Author's Affiliation | Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | Masaki SATOH |
| 2nd Author's Affiliation | Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
| 3rd Author's Name | Shun-ichiro OHMI |
| 3rd Author's Affiliation | Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
| Date | 2007-10-04 |
| Paper # | SDM2007-178 |
| Volume (vol) | vol.107 |
| Number (no) | 245 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |