Presentation 2007-09-05
Series-shunt and shunt type S-band 100W GaN FET Switch
Masatake HANGAI, Tamotsu NISHINO, Yoshitaka KAMO, Moriyasu MIYAZAKI,
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Abstract(in English) A low-loss and high-power switch has been developed. Our invented switch is only dependent of the breakdown-voltage of the FET and the bias-voltage, and is independent of the gate-width of the FET. By using the switch circuit, the relationship between the insertion-loss and the power-handling capability can be eliminated. To verify this methodology, we fabricated a switch by using gallium-nitride FET process. The switch had the insertion loss of 0.97dB and the power-handling capability of 100W.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Switch / Low-loss / High-power / FET / Gallium-Nitride / Series-shunt and shunt type
Paper # MW2007-94
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Committee MW
Conference Date 2007/8/29(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Series-shunt and shunt type S-band 100W GaN FET Switch
Sub Title (in English)
Keyword(1) Switch
Keyword(2) Low-loss
Keyword(3) High-power
Keyword(4) FET
Keyword(5) Gallium-Nitride
Keyword(6) Series-shunt and shunt type
1st Author's Name Masatake HANGAI
1st Author's Affiliation Mitsubishi Electric Corporation()
2nd Author's Name Tamotsu NISHINO
2nd Author's Affiliation Mitsubishi Electric Corporation
3rd Author's Name Yoshitaka KAMO
3rd Author's Affiliation Mitsubishi Electric Corporation
4th Author's Name Moriyasu MIYAZAKI
4th Author's Affiliation Mitsubishi Electric Corporation
Date 2007-09-05
Paper # MW2007-94
Volume (vol) vol.107
Number (no) 208
Page pp.pp.-
#Pages 5
Date of Issue