| Presentation | 2007-08-23 A 1.92μs-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors Kazuki FUKUOKA, Osamu OZAWA, Ryo MORI, Yasuto IGARASHI, Toshio SASAKI, Takashi KURAISHI, Yoshihiko YASU, Koichiro ISHIBASHI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A technique for controlling rush current and wake-up time of thick-gate-oxide power switches is described. Suppressing the variation of rush current on PVT allows shorter wake-up times, which can reduce leakage currents in a mobile processor. Wake-up takes 1.92μs and leakage current is reduced by 96.9% in an application CPU domain. Probing the rush current indicated accurate control by the technique. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | thick-gate-oxide power switch / fast wake-up / leakage current reduction / rush current / PVT variation |
| Paper # | SDM2007-153,ICD2007-81 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2007/8/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A 1.92μs-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors |
| Sub Title (in English) | |
| Keyword(1) | thick-gate-oxide power switch |
| Keyword(2) | fast wake-up |
| Keyword(3) | leakage current reduction |
| Keyword(4) | rush current |
| Keyword(5) | PVT variation |
| 1st Author's Name | Kazuki FUKUOKA |
| 1st Author's Affiliation | Renesas Technology Corp.() |
| 2nd Author's Name | Osamu OZAWA |
| 2nd Author's Affiliation | Renesas Technology Corp. |
| 3rd Author's Name | Ryo MORI |
| 3rd Author's Affiliation | Renesas Technology Corp. |
| 4th Author's Name | Yasuto IGARASHI |
| 4th Author's Affiliation | Renesas Technology Corp. |
| 5th Author's Name | Toshio SASAKI |
| 5th Author's Affiliation | Renesas Technology Corp. |
| 6th Author's Name | Takashi KURAISHI |
| 6th Author's Affiliation | Renesas Technology Corp. |
| 7th Author's Name | Yoshihiko YASU |
| 7th Author's Affiliation | Renesas Technology Corp. |
| 8th Author's Name | Koichiro ISHIBASHI |
| 8th Author's Affiliation | Renesas Technology Corp. |
| Date | 2007-08-23 |
| Paper # | SDM2007-153,ICD2007-81 |
| Volume (vol) | vol.107 |
| Number (no) | 195 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |