Presentation | 2007-08-23 A 1.92μs-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors Kazuki FUKUOKA, Osamu OZAWA, Ryo MORI, Yasuto IGARASHI, Toshio SASAKI, Takashi KURAISHI, Yoshihiko YASU, Koichiro ISHIBASHI, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A technique for controlling rush current and wake-up time of thick-gate-oxide power switches is described. Suppressing the variation of rush current on PVT allows shorter wake-up times, which can reduce leakage currents in a mobile processor. Wake-up takes 1.92μs and leakage current is reduced by 96.9% in an application CPU domain. Probing the rush current indicated accurate control by the technique. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | thick-gate-oxide power switch / fast wake-up / leakage current reduction / rush current / PVT variation |
Paper # | SDM2007-153,ICD2007-81 |
Date of Issue |
Conference Information | |
Committee | ICD |
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Conference Date | 2007/8/16(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
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Assistant |
Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A 1.92μs-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors |
Sub Title (in English) | |
Keyword(1) | thick-gate-oxide power switch |
Keyword(2) | fast wake-up |
Keyword(3) | leakage current reduction |
Keyword(4) | rush current |
Keyword(5) | PVT variation |
1st Author's Name | Kazuki FUKUOKA |
1st Author's Affiliation | Renesas Technology Corp.() |
2nd Author's Name | Osamu OZAWA |
2nd Author's Affiliation | Renesas Technology Corp. |
3rd Author's Name | Ryo MORI |
3rd Author's Affiliation | Renesas Technology Corp. |
4th Author's Name | Yasuto IGARASHI |
4th Author's Affiliation | Renesas Technology Corp. |
5th Author's Name | Toshio SASAKI |
5th Author's Affiliation | Renesas Technology Corp. |
6th Author's Name | Takashi KURAISHI |
6th Author's Affiliation | Renesas Technology Corp. |
7th Author's Name | Yoshihiko YASU |
7th Author's Affiliation | Renesas Technology Corp. |
8th Author's Name | Koichiro ISHIBASHI |
8th Author's Affiliation | Renesas Technology Corp. |
Date | 2007-08-23 |
Paper # | SDM2007-153,ICD2007-81 |
Volume (vol) | vol.107 |
Number (no) | 195 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |