Presentation 2007-08-23
A 1.92μs-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors
Kazuki FUKUOKA, Osamu OZAWA, Ryo MORI, Yasuto IGARASHI, Toshio SASAKI, Takashi KURAISHI, Yoshihiko YASU, Koichiro ISHIBASHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A technique for controlling rush current and wake-up time of thick-gate-oxide power switches is described. Suppressing the variation of rush current on PVT allows shorter wake-up times, which can reduce leakage currents in a mobile processor. Wake-up takes 1.92μs and leakage current is reduced by 96.9% in an application CPU domain. Probing the rush current indicated accurate control by the technique.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) thick-gate-oxide power switch / fast wake-up / leakage current reduction / rush current / PVT variation
Paper # SDM2007-153,ICD2007-81
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Committee ICD
Conference Date 2007/8/16(1days)
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Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A 1.92μs-wake-up time thick-gate-oxide power switch technique for ultra low-power single-chip mobile processors
Sub Title (in English)
Keyword(1) thick-gate-oxide power switch
Keyword(2) fast wake-up
Keyword(3) leakage current reduction
Keyword(4) rush current
Keyword(5) PVT variation
1st Author's Name Kazuki FUKUOKA
1st Author's Affiliation Renesas Technology Corp.()
2nd Author's Name Osamu OZAWA
2nd Author's Affiliation Renesas Technology Corp.
3rd Author's Name Ryo MORI
3rd Author's Affiliation Renesas Technology Corp.
4th Author's Name Yasuto IGARASHI
4th Author's Affiliation Renesas Technology Corp.
5th Author's Name Toshio SASAKI
5th Author's Affiliation Renesas Technology Corp.
6th Author's Name Takashi KURAISHI
6th Author's Affiliation Renesas Technology Corp.
7th Author's Name Yoshihiko YASU
7th Author's Affiliation Renesas Technology Corp.
8th Author's Name Koichiro ISHIBASHI
8th Author's Affiliation Renesas Technology Corp.
Date 2007-08-23
Paper # SDM2007-153,ICD2007-81
Volume (vol) vol.107
Number (no) 195
Page pp.pp.-
#Pages 5
Date of Issue