Presentation 2007-08-23
Design method of low-power dual-supply-voltage system LSI taking into account gate/sub-threshold leakage current of MOSFET
Shigeyoshi Watanabe, Satoshi Hanami, Manabu Kobayashi, Toshitoku Takabatake,
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Abstract(in English) Reduction of power dissipation caused by dynamic current, gate leakage current, and subthreshold leakage current of dual-supply-voltage (V_H, V_L) system LSI has been analyzed. The reduction ratio of power dissipation due to leakage current is strongly depend on V_H. Not only dynamic current but also leakage current can be successfully reduced with using conventional dual-supply- voltage scheme for 32nm-65nm generation.
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Keyword(in English) system LSI / dual supply voltage scheme / dynamic current / gate leakage current / subthreshold leakage current / MOSFET / scaling rule / path-delay distribution
Paper # SDM2007-150,ICD2007-78
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Committee ICD
Conference Date 2007/8/16(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Design method of low-power dual-supply-voltage system LSI taking into account gate/sub-threshold leakage current of MOSFET
Sub Title (in English)
Keyword(1) system LSI
Keyword(2) dual supply voltage scheme
Keyword(3) dynamic current
Keyword(4) gate leakage current
Keyword(5) subthreshold leakage current
Keyword(6) MOSFET
Keyword(7) scaling rule
Keyword(8) path-delay distribution
1st Author's Name Shigeyoshi Watanabe
1st Author's Affiliation Department of Information Science, Shonan Institute of Technology()
2nd Author's Name Satoshi Hanami
2nd Author's Affiliation Department of Information Science, Shonan Institute of Technology
3rd Author's Name Manabu Kobayashi
3rd Author's Affiliation Department of Information Science, Shonan Institute of Technology
4th Author's Name Toshitoku Takabatake
4th Author's Affiliation Department of Information Science, Shonan Institute of Technology
Date 2007-08-23
Paper # SDM2007-150,ICD2007-78
Volume (vol) vol.107
Number (no) 195
Page pp.pp.-
#Pages 6
Date of Issue