| Presentation | 2007-08-09 Vertically Aligned CNT Growth on Sectional Plane of Catalytic Thin Film Using DC Plasma-Enhanced CVD Hiroki Okuyama, Takuya Sonomura, Nobuyuki Iwata, Hiroshi Yamamoto, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Position and/or direction controlling of CNTs is a necessary process technology to prepare nanoscaled CNT electronic devices, such as scanning probe microscopy tips or electronic measuring nanoprobes. We want to demonstrate a new position-controlling method for vertically aligned CNT (VACNT) growth on edges of catalytic thin films. A Mo film was deposited on a Ni catalyst thin film to prevent CNT growth from surfaces. The bi-layered films were partially shaved using a diamond cutter, FIB, and lift-off method to obtain fresh Ni sectional planes. CNTs were grown using a DC plasma-enhanced CVD method. From SEM and TEM images it was confirmed that multiwalled VACNTs with ca. 25 nm diameter grew vertically to substrate surfaces. The VACNT growth took place from only sectional planes of the catalytic Ni film. The sectional plane with few tens nm thickness acted as an effective nano-catalyst. Conclusively the VACNTs can be grown selectively on sectional planes of catalytic thin films. The technique newly developed in this work will be applied to prepare various CNT nano-devices. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Vertically aligned CNT / Growth control / Catalytic thin film / Sectional plane / Plasma-enhanced CVD |
| Paper # | CPM2007-41 |
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| Committee | CPM |
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| Conference Date | 2007/8/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Vertically Aligned CNT Growth on Sectional Plane of Catalytic Thin Film Using DC Plasma-Enhanced CVD |
| Sub Title (in English) | |
| Keyword(1) | Vertically aligned CNT |
| Keyword(2) | Growth control |
| Keyword(3) | Catalytic thin film |
| Keyword(4) | Sectional plane |
| Keyword(5) | Plasma-enhanced CVD |
| 1st Author's Name | Hiroki Okuyama |
| 1st Author's Affiliation | College of Science and Technology, Nihon University() |
| 2nd Author's Name | Takuya Sonomura |
| 2nd Author's Affiliation | College of Science and Technology, Nihon University |
| 3rd Author's Name | Nobuyuki Iwata |
| 3rd Author's Affiliation | College of Science and Technology, Nihon University |
| 4th Author's Name | Hiroshi Yamamoto |
| 4th Author's Affiliation | College of Science and Technology, Nihon University |
| Date | 2007-08-09 |
| Paper # | CPM2007-41 |
| Volume (vol) | vol.107 |
| Number (no) | 178 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |