| Presentation | 2007-08-09 Room-temperature observation of Coulomb staircases from an aluminum nanodot fabricated by anodization Yasuo KIMURA, Michio NIWANO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is necessary to develop a hybrid technique of bottom-up and top-down processes for fabrication of room-temperature operating nanodevices at an appropriate position. In this study, an aluminum nanodot was self-organized between source and drain electrodes simultaneously with formation of the source and drain electrodes using the anodization process of an aluminum microelectrode of 3 μm in width. We observed a clear Coulomb staircase with a very large Coulomb energy of about 2 eV at room temperature. This very large Coulomb energy is attributed to the device structure, which depends strongly on the aluminum nanodot formation mechanism. Our results indicate that a single electron transistor (SET) operating at room temperature can be fabricated at an appropriate position using both bottom-up and top-down processes. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Single electron transistor / Anodization / Coulomb blockade / Room-temperature operation |
| Paper # | CPM2007-39 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2007/8/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Room-temperature observation of Coulomb staircases from an aluminum nanodot fabricated by anodization |
| Sub Title (in English) | |
| Keyword(1) | Single electron transistor |
| Keyword(2) | Anodization |
| Keyword(3) | Coulomb blockade |
| Keyword(4) | Room-temperature operation |
| 1st Author's Name | Yasuo KIMURA |
| 1st Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University : CREST, Japan Science and Technology Corporation() |
| 2nd Author's Name | Michio NIWANO |
| 2nd Author's Affiliation | Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University : CREST, Japan Science and Technology Corporation |
| Date | 2007-08-09 |
| Paper # | CPM2007-39 |
| Volume (vol) | vol.107 |
| Number (no) | 178 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |