| Presentation | 2007-08-09 P3HT有機電界効果トランジスタの有機絶縁膜界面の化学修飾効果 , |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | P3HT has attracted much attention as a source material of organic field effect transistors (OFETs) because it is easily solved with a chloroform solution to be instantly casted as a film. We have investigated effects of chemical modification on oxide surfaces of P3HT OFETs on the electric performance. We have confirmed HMDS treatments are effective to improve the transconductunce of OFETs. We discuss the mechanism of the chemical treatment on the OFET operation in the present paper. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | OFET / HMDS / XRD / FTIR |
| Paper # | CPM2007-37 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2007/8/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | |
| Sub Title (in English) | |
| Keyword(1) | OFET |
| Keyword(2) | HMDS |
| Keyword(3) | XRD |
| Keyword(4) | FTIR |
| 1st Author's Name | |
| 1st Author's Affiliation | () |
| Date | 2007-08-09 |
| Paper # | CPM2007-37 |
| Volume (vol) | vol.107 |
| Number (no) | 178 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |