Presentation 1999/10/21
High-Frequency Modeling of BJT Fabricated on High Resistive Si Substrate
M. ONO, N. Suematsu, S. Kubo, Y. Iyama, T. Takagi, O. Ishida,
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Abstract(in English) The high-resistive substrate enhances the RF performance of BJT and enables to reduce the dielectric loss of spiral inductor. In this paper, to evaluate the effect of high resistive substrate on RF performance of BJT, and the same dimension BJT's have been fabricated on both high resistive substrate and conventional low resistive substrate . The equivalent circuit parameters have been extracted by using the equivalent circuit model in consideration of dielectric loss of these substrates. The improvement effect of RF performance of BJT can be explained only with the dielectric loss of the substrate by referring the extracted equivalent circuit parameter.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Microwave circuits / Si-MMIC / Bipolar junction transistor / High resistive Si substrate
Paper # EMCJ99-70,MW99-122
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Conference Information
Committee EMCJ
Conference Date 1999/10/21(1days)
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Paper Information
Registration To Electromagnetic Compatibility (EMCJ)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-Frequency Modeling of BJT Fabricated on High Resistive Si Substrate
Sub Title (in English)
Keyword(1) Microwave circuits
Keyword(2) Si-MMIC
Keyword(3) Bipolar junction transistor
Keyword(4) High resistive Si substrate
1st Author's Name M. ONO
1st Author's Affiliation Information Technology R&D Center Mitsubishi Electric Corp()
2nd Author's Name N. Suematsu
2nd Author's Affiliation Information Technology R&D Center Mitsubishi Electric Corp
3rd Author's Name S. Kubo
3rd Author's Affiliation Information Technology R&D Center Mitsubishi Electric Corp.
4th Author's Name Y. Iyama
4th Author's Affiliation Information Technology R&D Center Mitsubishi Electric Corp.
5th Author's Name T. Takagi
5th Author's Affiliation Information Technology R&D Center Mitsubishi Electric Corp.
6th Author's Name O. Ishida
6th Author's Affiliation Information Technology R&D Center Mitsubishi Electric Corp.
Date 1999/10/21
Paper # EMCJ99-70,MW99-122
Volume (vol) vol.99
Number (no) 368
Page pp.pp.-
#Pages 8
Date of Issue