Presentation 2007-06-29
Intersubband transition in GaN/AlN multiple quantum disk nanocolumns
Kaiichi Tanaka, Keita Ikuno, Yohei Kasai, Kazuya Fukunaga, Hideyuki Kunugita, Kazuhiro Ema, Akihiko Kikuchi, Katsumi Kishino,
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Abstract(in English) The electronic relaxation process of intersubband transition (ISBT) in semiconductor quantum wells is extremely fast due to strong electron-phonon interactions. ISBT has attracted a lot of attention as a good candidate for all-optical switching devices, because of its speed and tunability to the optical communication wavelengths of 1.2~1.6μm. The GaN-based ISBT has the issue that owing to lattice mismatch between GaN(AlN) and the sapphire substrate, the GaN/AlN epitaxial layer exhibits high-density threading dislocations. Self-organized GaN nanocolumns are essentially free of threading dislocations, and a GaN/AlN multiple-quantum disk (MQD) can be inserted into GaN nanocolumns. Therefore, the nanocolumn-ISBT is expected to improve the switching performance. In this study, we investigated the ultrafast relaxation dynamics of ISBT at 1.55 um in GaN/AlN MQD nanocolumns using the degenerate pump probe technique at 1.55μm and confirmed the high-speed performance of the ISBT was preserved. We also estimated the saturation intensity of the nanocolumn ISBT.
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Keyword(in English) GaN / subband / communication wavelength / quantum well / nanocolumn
Paper # OPE2007-22,LQE2007-23
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Conference Information
Committee LQE
Conference Date 2007/6/22(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Intersubband transition in GaN/AlN multiple quantum disk nanocolumns
Sub Title (in English)
Keyword(1) GaN
Keyword(2) subband
Keyword(3) communication wavelength
Keyword(4) quantum well
Keyword(5) nanocolumn
1st Author's Name Kaiichi Tanaka
1st Author's Affiliation Faculty of Science and Technology, Sophia University()
2nd Author's Name Keita Ikuno
2nd Author's Affiliation Faculty of Science and Technology, Sophia University
3rd Author's Name Yohei Kasai
3rd Author's Affiliation Faculty of Science and Technology, Sophia University
4th Author's Name Kazuya Fukunaga
4th Author's Affiliation Faculty of Science and Technology, Sophia University
5th Author's Name Hideyuki Kunugita
5th Author's Affiliation Faculty of Science and Technology, Sophia University:CREST, JST
6th Author's Name Kazuhiro Ema
6th Author's Affiliation Faculty of Science and Technology, Sophia University:CREST, JST
7th Author's Name Akihiko Kikuchi
7th Author's Affiliation Faculty of Science and Technology, Sophia University:CREST, JST
8th Author's Name Katsumi Kishino
8th Author's Affiliation Faculty of Science and Technology, Sophia University:CREST, JST
Date 2007-06-29
Paper # OPE2007-22,LQE2007-23
Volume (vol) vol.107
Number (no) 125
Page pp.pp.-
#Pages 5
Date of Issue