| Presentation | 2007-06-29 Room-temperature continuous wave operation of 1.3 μm InAs quantum dot lasers with GaInNAs embedded layer on GaAs substrate grown by MOCVD Rei HASHIMOTO, Mitsuhiro KUSHIBE, Mizunori EZAKI, Masao NISHIOKA, Yasuhiko ARAKAWA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Quantum dot laser on GaAs substrates is attractive device for 1.3 μm and 1.55 μm optical fiber communication because of its theoretically predicted properties, such as low threshold current density, high temperature stability and high-frequency modulation with low chirp. We have developed GaInNAs embedded InAs QD lasers on GaAs substrate grown by MOCVD, and achieved a 1.31 μm room temperature continuous wave lasing operation with low threshold current density of 0.4kA/cm^2. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Quantum Dot / Laser / GaAs substrate / GaInNAs / InAs / 1.3μm |
| Paper # | OPE2007-21,LQE2007-22 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2007/6/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Room-temperature continuous wave operation of 1.3 μm InAs quantum dot lasers with GaInNAs embedded layer on GaAs substrate grown by MOCVD |
| Sub Title (in English) | |
| Keyword(1) | Quantum Dot |
| Keyword(2) | Laser |
| Keyword(3) | GaAs substrate |
| Keyword(4) | GaInNAs |
| Keyword(5) | InAs |
| Keyword(6) | 1.3μm |
| 1st Author's Name | Rei HASHIMOTO |
| 1st Author's Affiliation | Corporate R&D Center, Toshiba Corporation:Nanoelectronics Collaborative Research Center, University of Tokyo() |
| 2nd Author's Name | Mitsuhiro KUSHIBE |
| 2nd Author's Affiliation | Corporate R&D Center, Toshiba Corporation:Nanoelectronics Collaborative Research Center, University of Tokyo |
| 3rd Author's Name | Mizunori EZAKI |
| 3rd Author's Affiliation | Corporate R&D Center, Toshiba Corporation:Nanoelectronics Collaborative Research Center, University of Tokyo |
| 4th Author's Name | Masao NISHIOKA |
| 4th Author's Affiliation | Institute of Industrial Science, University of Tokyo:Research Center for Advanced Science and Technology, University of Tokyo |
| 5th Author's Name | Yasuhiko ARAKAWA |
| 5th Author's Affiliation | Institute of Industrial Science, University of Tokyo:Research Center for Advanced Science and Technology, University of Tokyo:Nanoelectronics Collaborative Research Center, University of Tokyo |
| Date | 2007-06-29 |
| Paper # | OPE2007-21,LQE2007-22 |
| Volume (vol) | vol.107 |
| Number (no) | 125 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |