| Presentation | 2007-06-29 GaInAsP/InP Membrane BH-DFB Laser with Air Bridge Structure Hideyuki NAITOH, Shinichi SAKAMOTO, Mamoru OHTAKE, Tadashi OKUMURA, Takeo MARUYAMA, Nobuhiko NISHIYAMA, Shigehisa ARAI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Membrane DFB laser structure is very promising for ultra low power consumption operation due to an enhanced modal gain and temperature insensitive lasing wavelength by using polymer cladding layers, e.g., BCB, which has negative temperature coefficient of refractive index. We fabricated membrane BH-DFB laser with air bridge structure by a selective etching of a sacrificial layer instead of direct wafer bonding method, which suffers from large wafer fabrication and fabrication reproducibility. A CW operation under optical pumping was attained from 10℃ up to 80℃ and the minimum threshold pump power of 4.3 mW was obtained at 20℃. From the pump power dependence of lasing wavelength, the thermal resistance was estimated to be 11 K/mW for this air-bridge membrane structure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DFB laser / Membrane laser / High optical confinement / GaInAsP/InP / Laterally selective etching |
| Paper # | OPE2007-20,LQE2007-21 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2007/6/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaInAsP/InP Membrane BH-DFB Laser with Air Bridge Structure |
| Sub Title (in English) | |
| Keyword(1) | DFB laser |
| Keyword(2) | Membrane laser |
| Keyword(3) | High optical confinement |
| Keyword(4) | GaInAsP/InP |
| Keyword(5) | Laterally selective etching |
| 1st Author's Name | Hideyuki NAITOH |
| 1st Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology() |
| 2nd Author's Name | Shinichi SAKAMOTO |
| 2nd Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
| 3rd Author's Name | Mamoru OHTAKE |
| 3rd Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
| 4th Author's Name | Tadashi OKUMURA |
| 4th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
| 5th Author's Name | Takeo MARUYAMA |
| 5th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:JST-CREST |
| 6th Author's Name | Nobuhiko NISHIYAMA |
| 6th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Department of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 7th Author's Name | Shigehisa ARAI |
| 7th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:JST-CREST |
| Date | 2007-06-29 |
| Paper # | OPE2007-20,LQE2007-21 |
| Volume (vol) | vol.107 |
| Number (no) | 125 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |