Presentation 2007/6/18
Correlation between Organic Chemical Reaction and Chemical Shift in Carbon-doped Silicon Oxide Film
Teresa Oh, Hong Bae Kim,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) SiOC film with sharp Si-CH_3 bond at 1260 cm^<-1> had the main band of 870-1350 cm^<-1>, which was deconvoluted the cage link and Si-O-C, Si-O-Si and Si-CH_3 bonds. The SiOC film of the flow rate ratio of O_2/BTMSM=1.07 changed to low frequency as the red shift in the main band of 870~1350 cm^<-1> in spite of small difference of the flow rate ratio. Moreover, the peak near 838 cm^<-1> divided into two peaks at the SiOC film of the flow rate ratio of O_2/BTMSM=1.07 but other samples near 838 cm^<-1> showed the one peak. The red shift in SiOC film depended on the increasing the relative carbon content due to the variation of the bonding structure from the cross-link breakage structure to the cross-link structure.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) SEM image / SiOC film / chemical shift / FTIR spectra / carbon / Si-O-C bond
Paper # ED2007-133,SDM2007-138
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Conference Information
Committee ED
Conference Date 2007/6/18(1days)
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Registration To Electron Devices (ED)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Correlation between Organic Chemical Reaction and Chemical Shift in Carbon-doped Silicon Oxide Film
Sub Title (in English)
Keyword(1) SEM image
Keyword(2) SiOC film
Keyword(3) chemical shift
Keyword(4) FTIR spectra
Keyword(5) carbon
Keyword(6) Si-O-C bond
1st Author's Name Teresa Oh
1st Author's Affiliation School of Electronics and Information Engineering, Cheongju University()
2nd Author's Name Hong Bae Kim
2nd Author's Affiliation School of Electronics and Information Engineering, Cheongju University
Date 2007/6/18
Paper # ED2007-133,SDM2007-138
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue