| Presentation | 2007/6/18 High Ruggedness Power MOSFET Design by a Source RTA Process Feng-Tsun Chien, Chih-Wei Wu, Chien-Nan Liao, Yao-Tsung Tsai, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Vertical double diffused Power MOSFETs require a specified breakdown voltage, low on resistance, high switching speed, and a large safe operation area. In addition, most of these applications require the MOSFETs can be switched on and off with an inductive load. Under this condition, the MOSFET must sustain a great deal of stress without causing destructive failure and this ability is called "ruggedness" of the device. However, we found the double diffused process will sacrifice its ruggedness performance owing to the large source area. In this study, double diffused-process was not applied in this device. We use the source RTA process and improve the device ruggedness. We also use the ISE simulator to simulate and compare the proposed and conventional structure as well as their doping profiles. It is shown that the source RTA structure can reduce the parasitic BJT effect effectively, and therefore, improving the device's avalanche energy capability, which is required for inductive load circuits. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Power MOSFET / unclamped inductive load switching (UIS) / Ruggedness / RTA |
| Paper # | ED2007-125,SDM2007-130 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Ruggedness Power MOSFET Design by a Source RTA Process |
| Sub Title (in English) | |
| Keyword(1) | Power MOSFET |
| Keyword(2) | unclamped inductive load switching (UIS) |
| Keyword(3) | Ruggedness |
| Keyword(4) | RTA |
| 1st Author's Name | Feng-Tsun Chien |
| 1st Author's Affiliation | Dept. of Electronics Engineering, National Chiao Tung University() |
| 2nd Author's Name | Chih-Wei Wu |
| 2nd Author's Affiliation | Dept. of Electronics Engineering, National Chiao Tung University |
| 3rd Author's Name | Chien-Nan Liao |
| 3rd Author's Affiliation | Dept. of Electrical Engineering, National Central University |
| 4th Author's Name | Yao-Tsung Tsai |
| 4th Author's Affiliation | Dept. of Electrical Engineering, National Central University |
| Date | 2007/6/18 |
| Paper # | ED2007-125,SDM2007-130 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |