| Presentation | 2007/6/18 Accurate Physical DC and AC Models of High-Voltage LDMOSFETs Ki-Soo Nam, Pyong-Su Kwag, Han-Sub Yoon, Oh-Kyong Kwon, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Accurate physical DC and AC models of 60V lateral double diffused MOSFETs (LDMOSFETs) are presented in this paper. These models are based on physical analysis considering device geometry, carrier distributions, mobility degradation effect, the effect of impact ionization, and the phenomena of the electron accumulation. In DC model, we divide LDMOSFETs into two regions to obtain the physical conduction model: one is channel region and the other is drift region. The channel region model is modified BSIM3v3 model and the drift region is employed voltage dependent resistance model considering electron distributions, the depth of current path, and the depleted length in the drift region. In AC model, we focus on the electron distributions in the drift region. The model is voltage dependent capacitance model considering the electron accumulation at the gate edge and the depletion in the drift region. The modeling results are compared with measured I-V and C-V characteristics and show good agreements with the measured results of devices within 10% error. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | LDMOSFET / physical model / DC model / AC model |
| Paper # | ED2007-124,SDM2007-129 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Accurate Physical DC and AC Models of High-Voltage LDMOSFETs |
| Sub Title (in English) | |
| Keyword(1) | LDMOSFET |
| Keyword(2) | physical model |
| Keyword(3) | DC model |
| Keyword(4) | AC model |
| 1st Author's Name | Ki-Soo Nam |
| 1st Author's Affiliation | Division of Electrical and Computer Engineering, Hanyang University() |
| 2nd Author's Name | Pyong-Su Kwag |
| 2nd Author's Affiliation | Division of Electrical and Computer Engineering, Hanyang University |
| 3rd Author's Name | Han-Sub Yoon |
| 3rd Author's Affiliation | Division of Electrical and Computer Engineering, Hanyang University |
| 4th Author's Name | Oh-Kyong Kwon |
| 4th Author's Affiliation | Division of Electrical and Computer Engineering, Hanyang University |
| Date | 2007/6/18 |
| Paper # | ED2007-124,SDM2007-129 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |